SCHEMBL525283

SCHEMBL525283

C=CC(=O)OC1CC2CC(CC(O)(C(F)(F)F)C(F)(F)F)C1C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23974056 0.90 ATM (0.33)
SCHEMBL775899 0.87
SCHEMBL19246056 0.82 ALDH1A1 (0.33)
SCHEMBL18457348 0.82 ALDH1A1 (0.33)
SCHEMBL876911 0.81
SCHEMBL445380 0.81
SCHEMBL19273362 0.81
SCHEMBL14556977 0.80
SCHEMBL12671415 0.79
SCHEMBL14559653 0.79

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 130 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11597696-B2 Method for purifying polymerizable fluoromonomer by distillation CENTRAL GLASS COMPANY, LIMITED (JP) 2023-03-07 US disclosed
US-20210317065-A1 Method for Purifying Polymerizable Fluoromonomer by Distillation CENTRAL GLASS COMPANY, LIMITED (JP) 2021-10-14 US disclosed
EP-2420891-B1 Process for immersion lithography ROHM & HAAS ELECT MAT (US) 2021-06-23 EP disclosed
US-10766992-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-08 US disclosed
EP-1720072-B1 Compositons and processes for immersion lithography ROHM & HAAS ELECT MAT (US) 2019-06-05 EP disclosed
US-9678426-B2 Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation CENTRAL GLASS COMPANY, LIMITED (JP) 2017-06-13 US disclosed
US-9678425-B2 Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation CENTRAL GLASS COMPANY, LIMITED (JP) 2017-06-13 US disclosed
US-9671693-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-06-06 US disclosed
US-9604891-B2 Methods for producing fluorine-containing hydroxyaldehyde, fluorine-containing propanediol, and fluorine-containing alcohol monomer CENTRAL GLASS COMPANY, LIMITED (JP) 2017-03-28 US disclosed
US-9507258-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-11-29 US disclosed
US-7358029-B2 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US disclosed
US-7358029-B2 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US disclosed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US disclosed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070105044-A1 Fluorine-containing polymer coating composition, method for forming fluorine-containing polymer film using coating composition, and method for forming photoresist or lithographic pattern CENTRAL GLASS COMPANY, LIMITED (JP) 2007-05-10 US disclosed
EP-1720072-A1 Compositons and processes for immersion lithography Rohm and Haas Electronic Materials, L.L.C. (US) 2006-11-08 EP disclosed
US-20060246373-A1 Applying on photoresist, a photoactive component, and material(s) having a water contact angle changeable by base treatment; activation by immersion exposing to radiation; reduced leaching; pentafluoroacrylate-ethyl cyclopentyl methacrylate-trimethylolpropane triacrylate terpolymer ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2006-11-02 US disclosed
US-20050131248-A1 Process for producing alpha-substituted acrylic norbornanyyl compounds CENTRAL GLASS COMPANY, LIMITED (JP) 2005-06-16 US disclosed