⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2697376 | 0.91 | — | — | |
| Formaldehyde SCHEMBL17201888 | 0.88 | — | — | |
| Hydrochloric Acid SCHEMBL10980991 | 0.88 | — | — | |
| Fluoride SCHEMBL14954374 | 0.88 | — | — | |
| Bromide SCHEMBL14953899 | 0.88 | — | — | |
| SCHEMBL14954321 | 0.88 | — | — | |
| Hydrochloric Acid SCHEMBL14954185 | 0.88 | — | — | |
| Iodide SCHEMBL14953796 | 0.88 | — | — | |
| SCHEMBL9326836 | 0.82 | — | — | |
| SCHEMBL10609979 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20060160344-A1 | Rhodium film and method of formation | MICRON TECHNOLOGY, INC. | 2006-07-20 | — | — | US | claimed |
| US-6943073-B2 | Process for low temperature atomic layer deposition of RH | MICRON TECHNOLOGY, INC. (US) | 2005-09-13 | — | — | US | claimed |
| US-6918960-B2 | CVD of PtRh with good adhesion and morphology | MICRON TECHNOLOGY, INC. (US) | 2005-07-19 | — | — | US | claimed |
| US-6881260-B2 | Process for direct deposition of ALD RhO2 | MICRON TECHNOLOGY, INC. (US) | 2005-04-19 | — | — | US | claimed |
| US-20050066895-A1 | CVD of PtRh with good adhesion and morphology | LI WEIMIN (US) | 2005-03-31 | — | — | US | claimed |
| US-20040048451-A1 | Rhodium film and method of formation | MARSH EUGENE P (US) | 2004-03-11 | — | — | US | claimed |
| US-20030233976-A1 | Process for direct deposition of ALD RhO2 | MICRON TECHNOLOGY, INC. | 2003-12-25 | — | — | US | claimed |
| US-6656835-B2 | Process for low temperature atomic layer deposition of Rh | MICRON TECHNOLOGY, INC. | 2003-12-02 | — | — | US | claimed |
| US-20030100183-A1 | CVD of PtRh with good adhesion and morphology | MOSAID TECHNOLOGIES INCORPORATED (CA) | 2003-05-29 | — | — | US | claimed |
| US-20030054606-A1 | Rhodium film and method of formation | MICRON TECHNOLOGY, INC. | 2003-03-20 | — | — | US | claimed |
| US-20020197814-A1 | Process for low temperature atomic layer deposition of Rh | MICRON TECHNOLOGY, INC. | 2002-12-26 | — | — | US | claimed |
| US-8314456-B2 | Apparatus including rhodium-based charge traps | MICRON TECHNOLOGY, INC. (US) | 2012-11-20 | — | — | US | disclosed |
| US-20110278661-A1 | APPARATUS INCLUDING RHODIUM-BASED CHARGE TRAPS | MICRON TECHNOLOGY, INC. | 2011-11-17 | — | — | US | disclosed |
| US-7989290-B2 | Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps | MICRON TECHNOLOGY, INC. (US) | 2011-08-02 | — | — | US | disclosed |
| US-20090173991-A1 | METHODS FOR FORMING RHODIUM-BASED CHARGE TRAPS AND APPARATUS INCLUDING RHODIUM-BASED CHARGE TRAPS | MICRON TECHNOLOGY, INC. | 2009-07-09 | — | — | US | disclosed |
| US-20040048451-A1 | Rhodium film and method of formation | MARSH EUGENE P (US) | 2004-03-11 | — | — | US | disclosed |
| US-20030233976-A1 | Process for direct deposition of ALD RhO2 | MICRON TECHNOLOGY, INC. | 2003-12-25 | — | — | US | disclosed |
| US-6656835-B2 | Process for low temperature atomic layer deposition of Rh | MICRON TECHNOLOGY, INC. | 2003-12-02 | — | — | US | disclosed |
| US-20030054606-A1 | Rhodium film and method of formation | MICRON TECHNOLOGY, INC. | 2003-03-20 | — | — | US | disclosed |
| US-20020197814-A1 | Process for low temperature atomic layer deposition of Rh | MICRON TECHNOLOGY, INC. | 2002-12-26 | — | — | US | disclosed |