⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Arsenic SCHEMBL3784879 | 1.00 | — | — | |
| Arsenic SCHEMBL2458467 | 0.82 | — | — | |
| Arsenic SCHEMBL766950 | 0.82 | — | — | |
| Arsenic SCHEMBL9410225 | 0.82 | — | — | |
| Arsenic SCHEMBL2787866 | 0.82 | — | — | |
| Arsenic SCHEMBL2452561 | 0.82 | — | — | |
| Arsenic SCHEMBL15795633 | 0.82 | — | — | |
| Phosphine SCHEMBL6664383 | 0.82 | — | — | |
| Arsenic SCHEMBL5551789 | 0.82 | — | — | |
| Arsenic SCHEMBL27447640 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1834 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119560888-A | Quantum well laser epitaxial structure and quantum well laser | 中国科学院半导体研究所 | 2025-03-04 | — | — | CN | claimed |
| CN-119560887-A | Inter-band cascade laser epitaxial structure and inter-band cascade laser | 中国科学院半导体研究所 | 2025-03-04 | — | — | CN | claimed |
| CN-119194081-A | Method for separating impurity arsenic in wet process treatment of high-arsenic indium-containing zinc oxide smoke dust | 赤峰中色锌业有限公司 | 2024-12-27 | — | — | CN | claimed |
| CN-118943222-A | Double-metal-insulator-semiconductor structure solar cell and preparation method thereof | 复旦大学 | 2024-11-12 | — | — | CN | claimed |
| EP-4441791-A1 | FOCAL PLANE ARRAY HAVING AN INDIUM ARSENIDE ABSORBER LAYER | Corning Incorporated (US) | 2024-10-09 | — | — | EP | claimed |
| CN-117568921-A | V-shaped slot indium-arsenic substrate material liquid phase epitaxy graphite boat for removing residual molten drops | 中国科学院上海技术物理研究所 | 2024-02-20 | — | — | CN | claimed |
| US-20240012177-A1 | Self-Aligned Nano-Pillar Coatings and Method of Manufacturing | Metalenz, Inc. (US) | 2024-01-11 | — | — | US | claimed |
| EP-4275080-A1 | SELF-ALIGNED NANO-PILLAR COATINGS AND METHOD OF MANUFACTURING | Metalenz, Inc. (US) | 2023-11-15 | — | — | EP | claimed |
| US-11728428-B2 | Dielectric isolated fin with improved fin profile | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2023-08-15 | — | — | US | claimed |
| CN-107393982-B | Method for improving cut-off wavelength of InAs/GaSb superlattice infrared detector material and InAs/GaSb type II superlattice and application thereof | 秦皇岛博硕光电设备股份有限公司 | 2023-06-27 | — | — | CN | claimed |
| US-6855948-B2 | Low base-emitter voltage heterojunction bipolar transistor | HRL LABORATORIES, LLC (US) | 2005-02-15 | — | — | US | claimed |
| CN-1549411-A | Method for producing self-organizing indium arsenide/gallium arsenide disk shape quantum point material | 中国科学院半导体研究所 | 2004-11-24 | — | — | CN | claimed |
| US-6777317-B2 | Method for semiconductor gate doping | ULTRATECH STEPPER, INC. | 2004-08-17 | — | — | US | claimed |
| CN-1490887-A | Super radiative light emitting transistor with self organized quantum spot as active region | 中国科学院半导体研究所 | 2004-04-21 | — | — | CN | claimed |
| CN-1442932-A | Phase control array laser device manufactured by using vertical cavity surface emitting semi-conductor laser | CHINESE ACAD PHYSICS INST (CN) | 2003-09-17 | — | — | CN | claimed |
| CN-2572627-Y | Phased array semiconductor laser device | INST OF PHYSICS CAS (CN) | 2003-09-10 | — | — | CN | claimed |
| US-20030166325-A1 | Low base-emitter voltage heterojunction bipolar transistor | HRL LABORATORIES, LLC | 2003-09-04 | — | — | US | claimed |
| WO-2003052832-A2 | LOW BASE-EMITTER VOLTAGE HETEROJUNCTION BIPOLAR TRASISTOR | HRL LABORATORIES, LLC (US) | 2003-06-26 | — | — | WO | claimed |
| US-6353317-B1 | Mesoscopic non-magnetic semiconductor magnetoresistive sensors fabricated with island lithography | IMPERIAL COLLEGE OF SCIENCE, TECHNOLOGY AND MEDICINE (GB) | 2002-03-05 | — | — | US | claimed |
| US-5368701-A | Process for forming Zintl phases and the products thereof | NEC RESEARCH INSTITUTE, INC. (US) | 1994-11-29 | — | — | US | claimed |