⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Arsenic SCHEMBL27643190 | 1.00 | — | — | |
| Arsenic SCHEMBL27629735 | 1.00 | — | — | |
| Arsenic SCHEMBL3856681 | 0.87 | — | — | |
| Phosphine SCHEMBL28257084 | 0.87 | — | — | |
| Arsenic SCHEMBL17685671 | 0.87 | — | — | |
| Phosphine SCHEMBL27791111 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL27806158 | 0.87 | — | — | |
| Arsenic SCHEMBL5053904 | 0.87 | — | — | |
| SCHEMBL301648 | 0.82 | — | — | |
| Arsenic SCHEMBL1011659 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1003 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119627624-B | Method for manufacturing active region of indium arsenide/indium phosphide quantum dot laser | 湖南汇思光电科技有限公司 | 2025-06-13 | — | — | CN | claimed |
| CN-120127491-A | Micro-transfer printing method of laser chip and photon integrated chip | 上海易微达光电科技有限公司 | 2025-06-10 | — | — | CN | claimed |
| CN-119894125-A | Ultra-low noise Geiger avalanche single photon detector and preparation method thereof | 西南技术物理研究所 | 2025-04-25 | — | — | CN | claimed |
| CN-119627624-A | Method for manufacturing active region of indium arsenide/indium phosphide quantum dot laser | 湖南汇思光电科技有限公司 | 2025-03-14 | — | — | CN | claimed |
| CN-117637826-B | Fin type electron hole double-layer tunneling field effect transistor and preparation method thereof | 兰州交通大学 | 2024-09-10 | — | — | CN | claimed |
| CN-118281027-A | Addressable LED device structure | 宁波飞芯电子科技有限公司 | 2024-07-02 | — | — | CN | claimed |
| CN-117637826-A | Fin type electron hole double-layer tunneling field effect transistor and preparation method thereof | 兰州交通大学 | 2024-03-01 | — | — | CN | claimed |
| CN-116779709-A | Photoelectric detector, receiving end equipment and working mode switching method | 华为技术有限公司 | 2023-09-19 | — | — | CN | claimed |
| WO-2023169203-A1 | PHOTOELECTRIC DETECTOR, RECEIVING END DEVICE, AND WORKING MODE SWITCHING METHOD | 华为技术有限公司 | 2023-09-14 | — | — | WO | claimed |
| CN-219658716-U | InGaAs/InAlAs undoped tunneling transistor with negative capacitance effect | 兰州交通大学 | 2023-09-08 | — | — | CN | claimed |
| CN-1216401-C | Method for preparing low temp. ultrathin heteroepitaxial flexible substrate | INST OF SEMICONDORTOR CAS (CN) | 2005-08-24 | — | — | CN | claimed |
| CN-1622406-A | Integrated device of semiconductor laser and wedge shaped waveguide modular speckle converter | INST OF SEMICONDUCTORS CAS (CN) | 2005-06-01 | — | — | CN | claimed |
| CN-1155099-C | Field effect transistor | ���µ�����ҵ��ʽ���� | 2004-06-23 | — | — | CN | claimed |
| CN-1490887-A | Super radiative light emitting transistor with self organized quantum spot as active region | 中国科学院半导体研究所 | 2004-04-21 | — | — | CN | claimed |
| CN-1484276-A | Method for preparing low temp. ultrathin heteroepitaxial flexible substrate | 中国科学院半导体研究所 | 2004-03-24 | — | — | CN | claimed |
| CN-1452214-A | Adjustable bonding strength flexible substrate | INST SEMICONDUCTORS CAS (CN) | 2003-10-29 | — | — | CN | claimed |
| CN-1442932-A | Phase control array laser device manufactured by using vertical cavity surface emitting semi-conductor laser | CHINESE ACAD PHYSICS INST (CN) | 2003-09-17 | — | — | CN | claimed |
| CN-2572627-Y | Phased array semiconductor laser device | INST OF PHYSICS CAS (CN) | 2003-09-10 | — | — | CN | claimed |
| CN-1192587-A | Field effect transistor | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 1998-09-09 | — | — | CN | claimed |
| EP-0283278-A2 | Compound semiconductor device having nonalloyed ohmic contacts | FUJITSU LIMITED (JP) | 1988-09-21 | — | — | EP | claimed |