⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28885993 | 0.80 | — | — | |
| SCHEMBL11215480 | 0.76 | — | — | |
| SCHEMBL28049267 | 0.73 | — | — | |
| SCHEMBL7165758 | 0.69 | — | — | |
| SCHEMBL464825 | 0.67 | — | — | |
| SCHEMBL27790986 | 0.67 | — | — | |
| SCHEMBL2049611 | 0.67 | — | — | |
| SCHEMBL4370009 | 0.67 | — | — | |
| SCHEMBL238816 | 0.66 | — | — | |
| SCHEMBL14996909 | 0.66 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114853497-B | Active metal brazing copper-clad ceramic substrate and preparation method thereof | 南京中江新材料科技有限公司 | 2023-01-31 | — | — | CN | claimed |
| CN-114853497-A | Active metal brazing copper-clad ceramic substrate and preparation method thereof | 南京中江新材料科技有限公司 | 2022-08-05 | — | — | CN | claimed |
| CN-114853497-B | Active metal brazing copper-clad ceramic substrate and preparation method thereof | 南京中江新材料科技有限公司 | 2023-01-31 | — | — | CN | disclosed |
| CN-114853497-A | Active metal brazing copper-clad ceramic substrate and preparation method thereof | 南京中江新材料科技有限公司 | 2022-08-05 | — | — | CN | disclosed |
| US-5698261-A | FEEDING GAS-VAPOR MIXTURE OF TRICHLOROMETHYLSILANE AND HYDROGEN INTO REACTOR, DECOMPOSING MIXTURE ON HEATED SUBSTRATE TO FORM SILICON CARBIDE LAYER, SEPARATING, RECOVERING, RECYCLING DECOMPOSITION PRODUCTS | AKTSIONERNOE OBSCHESTVO RUSSKOE OBSCHESTVO PRIKLADNOI ELEKTRONIKI (RU) | 1997-12-16 | — | — | US | disclosed |
| EP-0665305-A1 | METHOD OF PRODUCING LAYERS OF SILICON CARBIDE AND AN ASSOCIATED PRODUCT | AKTSIONERNOE OBSCHESTVO "RUSSKOE OBSCHETSVO PRIKLADNOI ELEKTRONIKI" (RU) | 1995-08-02 | — | — | EP | disclosed |