Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 5/20 | 0.57 |
| ▸ | TDP1 | Q9NUW8 | 5/20 | 0.57 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.57 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.57 |
| ▸ | LMNA | P02545 | 2/20 | 0.54 |
| ▸ | F2 | P00734 | 1/20 | 0.54 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.53 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.53 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.53 |
| ▸ | MAPT | P10636 | 3/20 | 0.50 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.50 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.48 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.48 |
| ▸ | SRC | P12931 | 1/20 | 0.46 |
| ▸ | TP53 | P04637 | 1/20 | 0.45 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.44 |
| ▸ | SLC6A3 | Q01959 | 2/20 | 0.44 |
| ▸ | POLB | P06746 | 1/20 | 0.44 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.44 |
| ▸ | HTR1A | P08908 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7115491 | 0.89 | ELANE (0.47) | TSHRTDP1ALDH1A1HSD17B10CYP2D6 | |
| SCHEMBL7115499 | 0.85 | TSHR (0.50) | TSHRALDH1A1MAPTTP53KMT2A | |
| Hydrogen Peroxide SCHEMBL28425777 | 0.84 | TDP1 (0.64) | TSHRTDP1ALDH1A1HSD17B10LMNA | |
| SCHEMBL260960 | 0.84 | TDP1 (0.64) | TSHRTDP1ALDH1A1HSD17B10LMNA | |
| SCHEMBL1786261 | 0.84 | TSHR (0.59) | TSHRTDP1ALDH1A1HSD17B10LMNA | |
| Hydrogen Peroxide SCHEMBL28474133 | 0.84 | TDP1 (0.64) | TSHRTDP1ALDH1A1HSD17B10LMNA | |
| SCHEMBL1953844 | 0.84 | TSHR (0.59) | TSHRTDP1ALDH1A1HSD17B10LMNA | |
| SCHEMBL29199324 | 0.84 | TDP1 (0.64) | TSHRTDP1ALDH1A1HSD17B10LMNA | |
| SCHEMBL5158787 | 0.83 | TDP1 (0.53) | TSHRTDP1ALDH1A1HSD17B10LMNA | |
| SCHEMBL1784412 | 0.83 | TDP1 (0.53) | TSHRTDP1ALDH1A1HSD17B10LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-108137478-B | Compound, composition thereof, purification method, resist pattern formation method, and amorphous film production method | 三菱瓦斯化学株式会社 | 2021-09-28 | — | — | CN | disclosed |
| CN-107924123-B | Material for lithography, method for producing same, composition for lithography, method for forming pattern, compound, resin, and method for purifying same | 学校法人关西大学 | 2021-08-06 | — | — | CN | disclosed |
| CN-107428717-B | Resist composition, resist pattern forming method, and polyphenol compound used for same | 三菱瓦斯化学株式会社 | 2021-04-23 | — | — | CN | disclosed |
| CN-107533290-B | Resist base material, resist composition, and method for forming resist pattern | 三菱瓦斯化学株式会社 | 2021-04-09 | — | — | CN | disclosed |
| CN-108008600-B | Radiation-sensitive composition | 三菱瓦斯化学株式会社 | 2021-02-09 | — | — | CN | disclosed |
| CN-106054302-A | Polaroid protection film, polaroid therewith, and manufacturing method for polaroid protection film | 柯尼卡美能达株式会社 | 2016-10-26 | — | — | CN | disclosed |
| CN-103102251-B | Radiation-ray sensitive composition | MITSUBISHI GAS CHEMICAL INC. (JP) | 2016-01-20 | — | — | CN | disclosed |
| CN-102666461-B | Ring compound, its production method, radiation-ray sensitive composition and corrosion-resisting pattern formation method | MITSUBISHI GAS CHEMICAL CO.,INC. (JP) | 2015-09-30 | — | — | CN | disclosed |
| CN-103958455-A | Cyclic compound, method for producing same, radiation-sensitive composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL CO | 2014-07-30 | — | — | CN | disclosed |
| CN-103946204-A | Cyclic compound, method for producing same, radiation-sensitive composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL CO | 2014-07-23 | — | — | CN | disclosed |
| CN-103717562-A | Cyclic compound, method for producing same, composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL CO | 2014-04-09 | — | — | CN | disclosed |
| CN-101528653-B | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO | 2013-09-11 | — | — | CN | disclosed |
| CN-103102251-A | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO | 2013-05-15 | — | — | CN | disclosed |
| CN-102666461-A | Cyclic compound, process for production thereof, radiation-sensitive composition, and resist pattern formation method | MITSUBISHI GAS CHEMICAL CO | 2012-09-12 | — | — | CN | disclosed |
| CN-102648173-A | Cyclic compound, method for producing same, radiation sensitive composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL CO | 2012-08-22 | — | — | CN | disclosed |
| CN-102596874-A | Cyclic compound, method for producing same, radiation-sensitive composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL CO | 2012-07-18 | — | — | CN | disclosed |
| CN-101528653-A | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO (JP) | 2009-09-09 | — | — | CN | disclosed |
| US-5580702-A | COMPRISING A PHOTOSENSITIVE ACID-GENERATING COMPOUND AND A COPOLYMER OF P-HYDROXYSTYRENE AND AN ESTER OF P-CARBOXYMETHOXYSTYRENE; NONTOXIC; STEEP WALLS; HIGH SPEED; SEMICONDUCTORS | KABUSHIKI KAISHA TOSHIBA (JP) | 1996-12-03 | — | — | US | disclosed |
| US-5403695-A | Photolithography; high resolution; semiconductors | KABUSHIKI KAISHA TOSHIBA (JP) | 1995-04-04 | — | — | US | disclosed |