SCHEMBL8952111

SCHEMBL8952111

FC(F)(F)C#CBr

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11169285 0.96
SCHEMBL443045 0.71
SCHEMBL829504 0.67
SCHEMBL1818889 0.64
SCHEMBL7970718 0.63
SCHEMBL1820979 0.62
SCHEMBL4184176 0.61
SCHEMBL1821282 0.60
SCHEMBL459387 0.59
SCHEMBL14656540 0.58

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9230821-B2 Dry etching agent and dry etching method using the same CENTRAL GLASS COMPANY, LIMITED (JP) 2016-01-05 US claimed
US-9093388-B2 Dry etching agent and dry etching method using the same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-07-28 US claimed
US-20120298911-A1 Dry Etching Agent and Dry Etching Method Using the Same CENTRAL GLASS COMPANY, LIMITED (JP) 2012-11-29 US claimed
EP-2511948-A1 DRY ETCHING AGENT AND DRY ETCHING METHOD USING THE SAME Central Glass Company, Limited (JP) 2012-10-17 EP claimed
CN-102741987-A Dry etching agent and dry etching method using the same CENTRAL GLASS CO LTD 2012-10-17 CN claimed
CN-114410631-A Construction method and application of efficient synthesis of cembratriene-alcohol strain 江南大学 2022-04-29 CN disclosed
CN-114277040-A Construction method and application of bacterial strain for efficiently synthesizing beta-carotene 江南大学 2022-04-05 CN disclosed
US-11114305-B2 Etching method and semiconductor manufacturing method SHOWA DENKO K.K. (JP) 2021-09-07 US disclosed
US-20210217627-A1 ETCHING METHOD AND SEMICONDUCTOR MANUFACTURING METHOD SHOWA DENKO K.K. (JP) 2021-07-15 US disclosed
EP-3706158-A1 ETCHING METHOD AND SEMICONDUCTOR MANUFACTURING METHOD Showa Denko K.K. (JP) 2020-09-09 EP disclosed
CN-111213224-A Etching method and semiconductor manufacturing method 昭和电工株式会社 2020-05-29 CN disclosed
US-9230821-B2 Dry etching agent and dry etching method using the same CENTRAL GLASS COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-20120298911-A1 Dry Etching Agent and Dry Etching Method Using the Same CENTRAL GLASS COMPANY, LIMITED (JP) 2012-11-29 US disclosed
EP-2511948-A1 DRY ETCHING AGENT AND DRY ETCHING METHOD USING THE SAME Central Glass Company, Limited (JP) 2012-10-17 EP disclosed
CN-102741987-A Dry etching agent and dry etching method using the same CENTRAL GLASS CO LTD 2012-10-17 CN disclosed
US-5496848-A Process for the preparation of substituted difluorobenzo-1,3-dioxoles CIBA-GEIGY CORPORATION (US) 1996-03-05 US disclosed
US-5493032-A INSECTICIDES, MICROBIOCIDES CIBA-GEIGY CORPORATION (US) 1996-02-20 US disclosed
US-5420301-A Process for the preparation of substituted difluorobenzo-1,3-dioxoles CIBA-GEIGY CORPORATION (US) 1995-05-30 US disclosed
US-5281718-A Reacting in one pot reaction 2,2-difluorobenzodioxole with an organometal compound or metal to form 4-metallo-2,2-difluorobenzodioxole, reacting with unsaturated nitrile, then with isocyanide CIBA-GEIGY CORPORATION (US) 1994-01-25 US disclosed
US-5194628-A Reacting metallo-difluorobenzodioxole with unsaturated nitrile and then with sulfonylmethyl isocyanide CIBA-GEIGY CORPORATION (US) 1993-03-16 US disclosed