SCHEMBL903671

SCHEMBL903671

CC(C)C(CC(C)(C)C)c1ccc(O)cc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 10/20 0.54
CYP2C9 P11712 2/20 0.54
TDP1 Q9NUW8 2/20 0.54
LMNA P02545 2/20 0.54
CYP1A2 P05177 1/20 0.54
PGR P06401 1/20 0.54
CHRM2 P08172 1/20 0.54
CYP3A4 P08684 1/20 0.54
ADORA3 P0DMS8 1/20 0.54
AR P10275 1/20 0.54
CYP2D6 P10635 1/20 0.54
MAPT P10636 1/20 0.54
CHRM1 P11229 1/20 0.54
ALOX15 P16050 1/20 0.54
DRD1 P21728 1/20 0.54
TBXA2R P21731 1/20 0.54
PTGS1 P23219 1/20 0.54
SLC6A2 P23975 1/20 0.54
CYP2C19 P33261 1/20 0.54
ADRA1A P35348 1/20 0.54

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15279366 0.84 ESR1 (0.50) ESR1CYP2C9TDP1LMNACYP1A2
SCHEMBL13115155 0.82 ESR1 (0.53) ESR1CYP2C9TDP1LMNACYP1A2
SCHEMBL8373596 0.81 ESR1 (0.55) ESR1CYP2C9TDP1LMNACYP1A2
SCHEMBL15854207 0.81 ESR1 (0.55) ESR1CYP2C9TDP1LMNACYP1A2
SCHEMBL14707188 0.80 PPARG (0.36) ESR1CYP2C9TDP1LMNACYP1A2
SCHEMBL14621028 0.80 ESR1 (0.46) ESR1CYP2C9TDP1LMNACYP1A2
SCHEMBL13367108 0.79 TAAR1 (0.36) ESR1CYP2C9TDP1LMNACYP1A2
SCHEMBL11960807 0.79 ESR1 (0.44) ESR1CYP2C9TDP1LMNACYP1A2
SCHEMBL13893479 0.79 ADRB2 (0.45) TDP1LMNASLC6A2SLC6A3SMN1; SMN2
SCHEMBL784711 0.79 ESR1 (0.44) ESR1CYP2C9TDP1LMNACYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9023587-B2 Negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-05 US disclosed
EP-2535771-A1 Pattern forming method Fujifilm Corporation (JP) 2012-12-19 EP disclosed
WO-2012133939-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-10-04 WO disclosed
WO-2012043890-A1 GAP EMBEDDING COMPOSITION, METHOD OF EMBEDDING GAP AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE BY USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-04-05 WO disclosed
US-20120034559-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2012-02-09 US disclosed
EP-2413191-A1 Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith Fujifilm Corporation (JP) 2012-02-01 EP disclosed
EP-2034361-B1 Compound for use in a photosensitive composition FUJIFILM CORP (JP) 2012-02-01 EP disclosed
WO-2011108767-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2011-09-09 WO disclosed
WO-2011093520-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2011-08-04 WO disclosed
WO-2011034213-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING A PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-24 WO disclosed
EP-1816519-B1 Novel sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition FUJIFILM CORP (JP) 2010-11-03 EP disclosed
WO-2010114176-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-10-07 WO disclosed
EP-2177506-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND USED IN THE COMPOSITION Fujifilm Corporation (JP) 2010-04-21 EP disclosed
WO-2009113735-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-09-17 WO disclosed
EP-1835342-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-19 EP disclosed
EP-1795961-A1 Positive resist composition and pattern making method using the same Fujifilm Corporation (JP) 2007-06-13 EP disclosed
EP-1748318-A2 Chemical amplification-type resist composition and production process thereof Fuji Photo Film Co., Ltd. (JP) 2007-01-31 EP disclosed
EP-1739483-A2 Positive photosensitive composition and pattern forming method using the same Fuji Photo Film Co., Ltd. (JP) 2007-01-03 EP disclosed