⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23562966 | 0.80 | — | — | |
| SCHEMBL25313 | 0.72 | — | — | |
| SCHEMBL22891121 | 0.68 | — | — | |
| SCHEMBL13649877 | 0.67 | — | — | |
| SCHEMBL15351328 | 0.67 | — | — | |
| SCHEMBL5822827 | 0.66 | — | — | |
| SCHEMBL91181 | 0.66 | DGAT1 (0.35) | — | |
| SCHEMBL16029985 | 0.66 | — | — | |
| SCHEMBL183743 | 0.66 | — | — | |
| SCHEMBL24581557 | 0.64 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8211618-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-03 | — | — | US | disclosed |
| US-8198016-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| US-8129100-B2 | Double patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-06 | — | — | US | disclosed |
| US-8129086-B2 | Polymerizable compound, polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-06 | — | — | US | disclosed |
| US-8129099-B2 | Double patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-06 | — | — | US | disclosed |
| US-8105764-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-8101341-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-24 | — | — | US | disclosed |
| US-20110171580-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-14 | — | — | US | disclosed |
| US-20110129777-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-02 | — | — | US | disclosed |
| US-20100304297-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20090208886-A1 | DOUBLE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-7569323-B2 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-20090087786-A1 | PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090081595-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-03-26 | — | — | US | disclosed |
| US-20090053651-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-7449277-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL C., LTD (JP) | 2008-11-11 | — | — | US | disclosed |
| US-20080220381-A1 | Antireflection film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080199806-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-08-21 | — | — | US | disclosed |
| US-7368218-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-06 | — | — | US | disclosed |
| US-7332616-B2 | Polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-19 | — | — | US | disclosed |