SCHEMBL91311

SCHEMBL91311

C=C(C)C(=O)OC1CCC2CC(O)CC2C1

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9888269 0.93 ALDH1A1 (0.34) ALDH1A1
SCHEMBL17614044 0.91 ALDH1A1 (0.38) ALDH1A1
SCHEMBL9970229 0.91 ALDH1A1 (0.38) ALDH1A1
SCHEMBL91315 0.90 ALDH1A1 (0.34) ALDH1A1
SCHEMBL91316 0.88 CHRM2 (0.36) ALDH1A1
SCHEMBL1397186 0.85 ALDH1A1 (0.33) ALDH1A1
SCHEMBL2779120 0.85 ALDH1A1 (0.33) ALDH1A1
SCHEMBL14555143 0.83 CYP19A1 (0.35) ALDH1A1
SCHEMBL17677347 0.83 ALDH1A1 (0.34) ALDH1A1
SCHEMBL20869337 0.83 ALDH1A1 (0.34) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-20120183903-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-8192921-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-05 US disclosed
US-8129100-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8129086-B2 Polymerizable compound, polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8129099-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8105764-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-8101341-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-24 US disclosed
US-20120009527-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-12 US disclosed
US-20090253084-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-08 US disclosed
US-20090226843-A1 MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-10 US disclosed
US-20090208886-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-7449277-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL C., LTD (JP) 2008-11-11 US disclosed
US-20080227037-A1 Resist lower layer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-18 US disclosed
US-20080220381-A1 Antireflection film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-11 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
US-7332616-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed