SCHEMBL917722

SCHEMBL917722

O=[As].[LiH]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL35827 0.87
SCHEMBL3899357 0.75
SCHEMBL31356287 0.75
SCHEMBL30915510 0.75
SCHEMBL5468017 0.75
SCHEMBL8773616 0.75
SCHEMBL6735807 0.75
Lithium SCHEMBL31251930 0.67
Oxygen SCHEMBL28106894 0.58
SCHEMBL23780276 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118202504-A Positive electrode lithium supplementing material, preparation method, positive electrode plate, secondary battery and power utilization device 宁德时代新能源科技股份有限公司 2024-06-14 CN claimed
US-20240190715-A1 POSITIVE LITHIUM SUPPLEMENT MATERIAL AND PREPARATION METHOD THEREOF, POSITIVE ELECTRODE PLATE, SECONDARY BATTERY AND ELECTRICAL DEVICE CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED (CN) 2024-06-13 US claimed
EP-4376156-A1 POSITIVE ELECTRODE LITHIUM SUPPLEMENTING MATERIAL AND PREPARATION METHOD, POSITIVE ELECTRODE SHEET, SECONDARY BATTERY AND ELECTRIC DEVICE Contemporary Amperex Technology Co., Limited (CN) 2024-05-29 EP claimed
WO-2024077608-A1 POSITIVE ELECTRODE LITHIUM SUPPLEMENTING MATERIAL AND PREPARATION METHOD, POSITIVE ELECTRODE SHEET, SECONDARY BATTERY AND ELECTRIC DEVICE 宁德时代新能源科技股份有限公司 2024-04-18 WO claimed
CN-102569025-B Epitaxial substrate, semiconductor light emitting element using the same and manufacturing process KUNSHAN SINO SILICON TECHNOLOGY CO LTD 2014-12-24 CN claimed
CN-102569025-A Epitaxial substrate, semiconductor light emitting element using the same and manufacturing process KUNSHAN SINO SILICON TECHNOLOGY CO LTD 2012-07-11 CN claimed
US-7863164-B2 Method of growing GaN using CVD and HVPE Natioal Sun Yat-Sen University (TW) 2011-01-04 US claimed
US-20100248461-A1 Method of growing GaN using CVD and HVPE NATIONAL SUN YAT-SEN UNIVERSITY (TW) 2010-09-30 US claimed
US-20080233415-A1 Structure of LiAlO2 substrate having ZnO buffer layer NATIONAL SUN YAT-SEN UNIVERSITY (TW) 2008-09-25 US claimed
US-20080233671-A1 Method of fabricating GaN LED NATIONAL SUN YAT-SEN UNIVERSITY (TW) 2008-09-25 US claimed
US-20080231172-A1 Light emitting device using phosphor powder NATIONAL SUN YAT-SEN UNIVERSITY (TW) 2008-09-25 US claimed
CN-1105401-C Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth UNIV OF CENTRAL FLORIDA (US) 2003-04-09 CN claimed
CN-1159251-A Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth UNIV OF CENTRAL FLORIDA (US) 1997-09-10 CN claimed
US-5625202-A Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth UNIVERSITY OF CENTRAL FLORIDA (US) 1997-04-29 US claimed
WO-1996042114-A1 MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH UNIVERSITY OF CENTRAL FLORIDA (US) 1996-12-27 WO claimed
CN-118202504-A Positive electrode lithium supplementing material, preparation method, positive electrode plate, secondary battery and power utilization device 宁德时代新能源科技股份有限公司 2024-06-14 CN disclosed
US-20240190715-A1 POSITIVE LITHIUM SUPPLEMENT MATERIAL AND PREPARATION METHOD THEREOF, POSITIVE ELECTRODE PLATE, SECONDARY BATTERY AND ELECTRICAL DEVICE CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED (CN) 2024-06-13 US disclosed
US-5625202-A Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth UNIVERSITY OF CENTRAL FLORIDA (US) 1997-04-29 US disclosed
WO-1996042114-A1 MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH UNIVERSITY OF CENTRAL FLORIDA (US) 1996-12-27 WO disclosed
WO-1996042114-A1 MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH UNIVERSITY OF CENTRAL FLORIDA (US) 1996-12-27 WO disclosed