⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Helium SCHEMBL10078690 | 0.91 | — | — | |
| SCHEMBL1805 | 0.89 | — | — | |
| SCHEMBL27853443 | 0.89 | — | — | |
| Hydroxyl Radical SCHEMBL5493220 | 0.80 | — | — | |
| Hydrogen Sulfide SCHEMBL1485809 | 0.80 | — | — | |
| SCHEMBL20421267 | 0.80 | — | — | |
| SCHEMBL28383107 | 0.80 | — | — | |
| SCHEMBL11510811 | 0.80 | — | — | |
| SCHEMBL20764845 | 0.80 | — | — | |
| SCHEMBL6408104 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9917016-B2 | Integrated circuits and methods of forming the same with effective dummy gate cap removal | GlobalFoundries, Inc. (KY) | 2018-03-13 | — | — | US | disclosed |
| US-9431408-B2 | Methods for fabricating integrated circuits with a high-voltage MOSFET | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2016-08-30 | — | — | US | disclosed |
| US-20160172251-A1 | INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME WITH EFFECTIVE DUMMY GATE CAP REMOVAL | GLOBALFOUNDRIES U.S. INC. | 2016-06-16 | — | — | US | disclosed |
| US-9165770-B2 | Methods for fabricating integrated circuits using improved masks | GlobalFoundries, Inc. (KY) | 2015-10-20 | — | — | US | disclosed |
| US-20150236032-A1 | METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH A HIGH-VOLTAGE MOSFET | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2015-08-20 | — | — | US | disclosed |
| EP-2335277-B1 | METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS | ADVANCED MICRO DEVICES INC (US) | 2015-07-22 | — | — | EP | disclosed |
| US-9054135-B2 | Methods for fabricating integrated circuits with a high-voltage MOSFET | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2015-06-09 | — | — | US | disclosed |
| US-20150087149-A1 | METHODS FOR FABRICATING INTEGRATED CIRCUITS USING IMPROVED MASKS | GlobalFoundries, Inc. (KY) | 2015-03-26 | — | — | US | disclosed |
| US-20150037948-A1 | METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH A HIGH-VOLTAGE MOSFET | GLOBAL FOUNDRIES Singapore Pte. Ltd. (SG) | 2015-02-05 | — | — | US | disclosed |
| US-8946793-B2 | Integrated circuits having replacement gate structures and methods for fabricating the same | GlobalFoundries, Inc. (KY) | 2015-02-03 | — | — | US | disclosed |
| US-20100267237-A1 | METHODS FOR FABRICATING FINFET SEMICONDUCTOR DEVICES USING ASHABLE SACRIFICIAL MANDRELS | ADVANCED MICRO DEVICES, INC. (US) | 2010-10-21 | — | — | US | disclosed |
| US-20100210084-A1 | METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS | ADVANCED MICRO DEVICES, INC. (US) | 2010-08-19 | — | — | US | disclosed |
| US-7767534-B2 | Methods for fabricating MOS devices having highly stressed channels | ADVANCED MICRO DEVICES, INC. (US) | 2010-08-03 | — | — | US | disclosed |
| WO-2010085757-A1 | METHODS FOR FABRICATING MOS DEVICES HAVING EPITAXIALLY GROWN STRESS-INDUCING SOURCE AND DRAIN REGIONS | GLOBALFOUNDRIES INC. (KY) | 2010-07-29 | — | — | WO | disclosed |
| WO-2010037036-A1 | METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS | ADVANCED MICRO DEVICES, INC. (US) | 2010-04-01 | — | — | WO | disclosed |
| US-20100081245-A1 | METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS | ADVANCED MICRO DEVICES, INC. (US) | 2010-04-01 | — | — | US | disclosed |
| US-7670934-B1 | Methods for fabricating MOS devices having epitaxially grown stress-inducing source and drain regions | GLOBALFOUNDRIES INC. (KY) | 2010-03-02 | — | — | US | disclosed |
| US-20090011367-A1 | INTERFACE BINDER, RESIST COMPOSITION CONTAINING THE SAME, LAMINATE FOR FORMING MAGNETIC RECORDING MEDIUM HAVING LAYER CONTAINING THE SAME, MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM USING THE SAME, AND MAGNETIC RECORDING MEDIUM PRODUCED BY THE MANUFACTURING METHOD | FUJIFILM CORPORATION (JP) | 2009-01-08 | — | — | US | disclosed |
| US-6881529-B2 | Positive photoresist transfer material and method for processing surface of substrate using the transfer material | FUJI PHOTO FILM CO., LTD. (JP) | 2005-04-19 | — | — | US | disclosed |
| US-20030087179-A1 | Positive photoresist transfer material and method for processing surface of substrate using the transfer material | FUJI PHOTO FILM CO., LTD. | 2003-05-08 | — | — | US | disclosed |