Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC22A6 | Q4U2R8 | 1/20 | 0.42 |
| ▸ | HTT | P42858 | 1/20 | 0.41 |
| ▸ | KDM4E | B2RXH2 | 5/20 | 0.41 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.41 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.41 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.41 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.40 |
| ▸ | GAA | P10253 | 3/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.40 |
| ▸ | TSHR | P16473 | 2/20 | 0.40 |
| ▸ | MAPT | P10636 | 2/20 | 0.40 |
| ▸ | BLM | P54132 | 2/20 | 0.40 |
| ▸ | ESR1 | P03372 | 1/20 | 0.40 |
| ▸ | ITGB3 | P05106 | 1/20 | 0.40 |
| ▸ | ITGA2B | P08514 | 1/20 | 0.40 |
| ▸ | HMGB1 | P09429 | 1/20 | 0.40 |
| ▸ | HPGD | P15428 | 1/20 | 0.40 |
| ▸ | GGT1 | P19440 | 1/20 | 0.40 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.40 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL26938843 | 0.79 | TOP2A (0.35) | MAPK1GAAALDH1A1TSHRMAPT | |
| SCHEMBL15495622 | 0.79 | TYMS (0.33) | MAPK1GAAALDH1A1MAPTESR1 | |
| SCHEMBL3174222 | 0.77 | MAPT (0.55) | SLC22A6HTTKDM4ETDP1CYP3A4 | |
| SCHEMBL30002719 | 0.77 | HTT (0.61) | SLC22A6HTTKDM4ETDP1CYP3A4 | |
| SCHEMBL4444465 | 0.77 | HTT (0.61) | SLC22A6HTTKDM4ETDP1CYP3A4 | |
| SCHEMBL6688920 | 0.77 | HTT (0.56) | SLC22A6HTTKDM4ETDP1CYP3A4 | |
| SCHEMBL7638665 | 0.76 | KDM4E (0.46) | SLC22A6HTTKDM4ETDP1CYP3A4 | |
| SCHEMBL8765431 | 0.76 | KMT2A (0.46) | HTTKDM4ETDP1ALOX12GAA | |
| SCHEMBL15495689 | 0.76 | ALDH1A1 (0.41) | KDM4ETDP1MAPK1GAAALDH1A1 | |
| SCHEMBL26938837 | 0.75 | ESR1 (0.46) | HTTKDM4ECYP3A4GAAALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 141 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12164227-B2 | Chemically amplified negative resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-12-10 | — | — | US | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| EP-4047417-B1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2023-08-16 | — | — | EP | disclosed |
| WO-2023054126-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN-FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD | 富士フイルム株式会社 | 2023-04-06 | — | — | WO | disclosed |
| US-20220276557-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-09-01 | — | — | US | disclosed |
| EP-4047417-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2022-08-24 | — | — | EP | disclosed |
| CN-114924463-A | Chemically amplified negative resist composition and method for forming resist pattern | 信越化学工业株式会社 | 2022-08-19 | — | — | CN | disclosed |
| CN-109212903-B | Resist composition and resist pattern forming method | 信越化学工业株式会社 | 2022-03-29 | — | — | CN | disclosed |
| US-11231650-B2 | Chemically amplified negative resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-25 | — | — | US | disclosed |
| US-20140178818-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140065544-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-06 | — | — | US | disclosed |
| US-8389201-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-05 | — | — | US | disclosed |
| US-8361692-B2 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-29 | — | — | US | disclosed |
| US-20110003251-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-06 | — | — | US | disclosed |
| EP-2270596-A2 | Positive resist compostion and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2011-01-05 | — | — | EP | disclosed |
| US-20100304301-A1 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| EP-2256552-A1 | Negative resist composition and patterning process using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-12-01 | — | — | EP | disclosed |
| EP-0505972-B1 | Process for producing styrenic copolymer | IDEMITSU KOSAN CO (JP) | 1997-06-11 | — | — | EP | disclosed |
| EP-0505972-A2 | Process for producing styrenic copolymer | IDEMITSU KOSAN COMPANY LIMITED (JP) | 1992-09-30 | — | — | EP | disclosed |