SCHEMBL92839

SCHEMBL92839

C=C1CC(C)(C)OCO1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28280819 0.63 — —
SCHEMBL1979147 0.60 — —
SCHEMBL24471492 0.58 ALDH1A1 (0.33) —
SCHEMBL18121619 0.57 — —
SCHEMBL12517739 0.56 — —
SCHEMBL10597003 0.56 — —
SCHEMBL12865901 0.56 — —
SCHEMBL17931757 0.56 — —
SCHEMBL12513370 0.54 — —
SCHEMBL9880090 0.53 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120308930-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 — — US disclosed
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 — — US disclosed
US-8129099-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 — — US disclosed
US-20100203457-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-12 — — US disclosed
US-20100159404-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 — — US disclosed
US-20090297979-A1 Polymerizable compound, polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 — — US disclosed
US-20090208886-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 — — US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 — — US disclosed
US-20080227037-A1 Resist lower layer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-18 — — US disclosed
US-20080220381-A1 Antireflection film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-11 — — US disclosed
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