⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13430609 | 1.00 | — | — | |
| SCHEMBL557561 | 1.00 | — | — | |
| SCHEMBL706690 | 0.97 | — | — | |
| SCHEMBL31299139 | 0.92 | TSHR (0.40) | — | |
| SCHEMBL5570788 | 0.92 | TSHR (0.40) | — | |
| SCHEMBL5574602 | 0.92 | TSHR (0.40) | — | |
| SCHEMBL31299153 | 0.92 | TSHR (0.40) | — | |
| SCHEMBL9253777 | 0.92 | TSHR (0.40) | — | |
| SCHEMBL3149888 | 0.92 | TSHR (0.40) | — | |
| SCHEMBL31299234 | 0.92 | TSHR (0.40) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8603588-B2 | Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film | MITSUI CHEMICALS, INC. (JP) | 2013-12-10 | — | — | US | disclosed |
| US-8304924-B2 | Composition for sealing semiconductor, semiconductor device, and process for producing semiconductor device | MITSUI CHEMICALS, INC. (JP) | 2012-11-06 | — | — | US | disclosed |
| US-20110241210-A1 | COMPOSITION FOR SEALING SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE | MITSUI CHEMICALS, INC. (JP) | 2011-10-06 | — | — | US | disclosed |
| EP-2357664-A1 | COMPOSITION FOR SEALING SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE | Mitsui Chemicals, Inc. (JP) | 2011-08-17 | — | — | EP | disclosed |
| US-20110018108-A1 | COMPOSITION AND METHOD FOR PRODUCTON THEREOF, POROUS MATERIAL AND METHOD FOR PRODUCTION THEREOF, INTERLAYER INSULATING FILM, SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICE, AND LOW-REFRACTIVE-INDEX SURFACE PROTECTION FILM | MITSUI CHEMICALS ,INC. (JP) | 2011-01-27 | — | — | US | disclosed |
| EP-2267080-A1 | COMPOSITION AND METHOD FOR PRODUCTION THEREOF, POROUS MATERIAL AND METHOD FOR PRODUCTION THEREOF, INTERLAYER INSULATING FILM, SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICE, AND LOW-REFRACTIVE-INDEX SURFACE PROTECTION FILM | Mitsui Chemicals, Inc. (JP) | 2010-12-29 | — | — | EP | disclosed |
| US-20100233482-A1 | Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | HAMADA YOSHITAKA | 2010-09-16 | — | — | US | disclosed |
| US-7754330-B2 | Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-13 | — | — | US | disclosed |
| US-20090294922-A1 | ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | PANASONIC CORPORATION (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20090294726-A1 | ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20070135565-A1 | COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-7132473-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-11-07 | — | — | US | disclosed |
| EP-1568744-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-31 | — | — | EP | disclosed |
| US-20040219372-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |
| CN-1536023-A | Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device | ��Խ��ѧ��ҵ��ʽ���� | 2004-10-13 | — | — | CN | disclosed |