⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5087461 | 0.55 | — | — | |
| SCHEMBL5134016 | 0.45 | — | — | |
| SCHEMBL8023481 | 0.45 | — | — | |
| SCHEMBL15271759 | 0.32 | — | — | |
| SCHEMBL110 | 0.32 | — | — | |
| SCHEMBL10005363 | 0.32 | — | — | |
| SCHEMBL175898 | 0.32 | — | — | |
| SCHEMBL14086857 | 0.32 | — | — | |
| SCHEMBL13088830 | 0.26 | — | — | |
| SCHEMBL18053585 | 0.26 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4748968-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | Hansol Chemical Co., Ltd (KR) | 2026-05-27 | — | — | EP | claimed |
| EP-4667616-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | Hansol Chemical Co., Ltd (KR) | 2025-12-24 | — | — | EP | claimed |
| US-20250369114-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | HANSOL CHEMICAL CO LTD (KR) | 2025-12-04 | — | — | US | claimed |
| WO-2025018802-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | 주식회사 한솔케미칼 | 2025-01-23 | — | — | WO | claimed |
| US-11784026-B2 | Substrate processing apparatus, material layer deposition apparatus, and atmospheric pressure chemical vapor deposition apparatus | SAMSUNG ELECTRONICS CO., LTD. | 2023-10-10 | — | — | US | claimed |
| US-20210222300-A1 | SUBSTRATE PROCESSING APPARATUS, MATERIAL LAYER DEPOSITION APPARATUS, AND ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-07-22 | — | — | US | claimed |
| JP-6110197-A | — | — | None | — | — | JP | disclosed |
| EP-4748968-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | Hansol Chemical Co., Ltd (KR) | 2026-05-27 | — | — | EP | disclosed |
| EP-4667616-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | Hansol Chemical Co., Ltd (KR) | 2025-12-24 | — | — | EP | disclosed |
| US-20250369114-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | HANSOL CHEMICAL CO LTD (KR) | 2025-12-04 | — | — | US | disclosed |
| US-20250158027-A1 | NEGATIVE ELECTRODE ACTIVE MATERIAL, METHOD FOR PREPARING THE SAME, AND SECONDARY BATTERY AND ELECTRICAL DEVICE COMPRISING THE SAME | CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED (CN) | 2025-05-15 | — | — | US | disclosed |
| EP-4517870-A1 | NEGATIVE ELECTRODE ACTIVE MATERIAL AND PREPARATION METHOD THEREFOR, AND SECONDARY BATTERY AND ELECTRICAL DEVICE CONTAINING NEGATIVE ELECTRODE ACTIVE MATERIAL | Contemporary Amperex Technology (Hong Kong) Limited (HK) | 2025-03-05 | — | — | EP | disclosed |
| WO-2025018802-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | 주식회사 한솔케미칼 | 2025-01-23 | — | — | WO | disclosed |
| EP-3561860-A1 | METHOD OF FORMING A LOW-K LAYER AND METHOD OF FORMING A SEMICONDUCTOR DEVICE | Samsung Electronics Co., Ltd. (KR) | 2019-10-30 | — | — | EP | disclosed |
| WO-2019046301-A1 | CONFORMAL HALOGEN DOPING IN 3D STRUCTURES USING CONFORMAL DOPANT FILM DEPOSITION | APPLIED MATERIALS, INC. (US) | 2019-03-07 | — | — | WO | disclosed |
| CN-107068537-A | The method of material layer including its semiconductor devices and manufacture material layer and semiconductor devices | 三星电子株式会社 | 2017-08-18 | — | — | CN | disclosed |
| US-20170133219-A1 | MATERIAL LAYERS, SEMICONDUCTOR DEVICES INCLUDING THE SAME, AND METHODS OF FABRICATING MATERIAL LAYERS AND SEMICONDUCTOR DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-05-11 | — | — | US | disclosed |
| JP-H06110197-A | FORMATION OF MASK FORMING FINE PATTERN AND DEVICE THEREFOR | HITACHI LTD | 1994-04-22 | — | — | JP | disclosed |
| EP-0296702-A2 | Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes | DOW CORNING CORPORATION (US) | 1988-12-28 | — | — | EP | disclosed |
| US-4762808-A | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes | DOW CORNING CORPORATION (US) | 1988-08-09 | — | — | US | disclosed |