⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL103777 | 0.89 | — | — | |
| SCHEMBL15546351 | 0.89 | — | — | |
| SCHEMBL20398860 | 0.71 | TDP1 (0.50) | — | |
| SCHEMBL28493474 | 0.67 | — | — | |
| SCHEMBL11344682 | 0.67 | — | — | |
| SCHEMBL9753934 | 0.67 | — | — | |
| SCHEMBL3916405 | 0.67 | — | — | |
| SCHEMBL11145774 | 0.67 | — | — | |
| SCHEMBL21527943 | 0.67 | — | — | |
| SCHEMBL21527940 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 698 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12635431-B2 | High aspect ratio carbon layer etch with improved throughput and process window | TOKYO ELECTRON LIMITED (JP) | 2026-05-19 | — | — | US | claimed |
| US-20260130139-A1 | LOW TEMPERATURE SI-CONTAINING FILMS DEPOSITED FROM CHLOROSILANE AND AMINOSILANE REACTIONS | VERSUM MAT US LLC (US) | 2026-05-07 | — | — | US | claimed |
| US-12600638-B2 | Low temperature process for the safe conversion of the siemens process side-product mixture to chloromonosilanes | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2026-04-14 | — | — | US | claimed |
| US-12543516-B2 | Methods of forming silicon germanium structures | ASM IP HOLDING B.V. (NL) | 2026-02-03 | — | — | US | claimed |
| US-12525451-B2 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures | ASM IP HOLDING B.V. (NL) | 2026-01-13 | — | — | US | claimed |
| EP-4667616-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | Hansol Chemical Co., Ltd (KR) | 2025-12-24 | — | — | EP | claimed |
| US-20250369114-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | HANSOL CHEMICAL CO LTD (KR) | 2025-12-04 | — | — | US | claimed |
| WO-2025226985-A1 | PASSIVATION OF POLYSILICON MATERIAL AND SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL UTILIZING ALKYNES | VERSUM MATERIALS US, LLC (US) | 2025-10-30 | — | — | WO | claimed |
| US-20250308886-A1 | GAP FILLING BY ATOMIC LAYER DEPOSITION (ALD) | TOKYO ELECTRON LIMITED (JP) | 2025-10-02 | — | — | US | claimed |
| US-20250232981-A1 | HIGH ASPECT RATIO CARBON LAYER ETCH WITH IMPROVED THROUGHPUT AND PROCESS WINDOW | TOKYO ELECTRON LIMITED (JP) | 2025-07-17 | — | — | US | claimed |
| US-20080241748-A1 | Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same | CHEIL INDUSTRIES, INC. (KR) | 2008-10-02 | — | — | US | claimed |
| US-20080026149-A1 | METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES | ASM AMERICA, INC. (US) | 2008-01-31 | — | — | US | claimed |
| WO-2007140375-A2 | METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES | ASM AMERICA, INC. (US) | 2007-12-06 | — | — | WO | claimed |
| US-7033561-B2 | Process for preparation of polycrystalline silicon | DOW CORNING CORPORATION (US) | 2006-04-25 | — | — | US | claimed |
| US-6827786-B2 | For decomposition (distillation) of silane, trichlorosilane or tribromosilane; purification; semiconductors; fluidized bed reactor | LORD LTD LP | 2004-12-07 | — | — | US | claimed |
| EP-1392601-B1 | PROCESS FOR PREPARATION OF POLYCRYSTALLINE SILICON | HEMLOCK SEMICONDUCTOR CORP (US) | 2004-09-22 | — | — | EP | claimed |
| US-20040131528-A1 | Process for preparation of polycrystalline silicon | HEMLOCK SEMICONDUCTOR CORPORATION | 2004-07-08 | — | — | US | claimed |
| EP-1392601-A1 | PROCESS FOR PREPARATION OF POLYCRYSTALLINE SILICON | HEMLOCK SEMICONDUCTOR CORPORATION (US) | 2004-03-03 | — | — | EP | claimed |
| WO-2002100776-A1 | PROCESS FOR PREPARATION OF POLYCRYSTALLINE SILICON | HEMLOCK SEMICONDUCTOR CORPORATION (US) | 2002-12-19 | — | — | WO | claimed |
| US-20020187096-A1 | Reacting trichlorosilane with hydrogen to form silicon and an effluent mixture of tetrachlorosilane and possibly chlorinated disilane; hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes. | HEMLOCK SEMICONDUCTOR CORPORATION | 2002-12-12 | — | — | US | claimed |