SCHEMBL9420701

SCHEMBL9420701

COC(C)OC(=O)CS

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11366895 0.91 TSHR (0.46)
SCHEMBL11361395 0.89 TSHR (0.44)
SCHEMBL11361407 0.89 TSHR (0.44)
SCHEMBL5074468 0.87 TSHR (0.50)
SCHEMBL11965900 0.82 ACE (0.42)
SCHEMBL11621178 0.80 TSHR (0.39)
SCHEMBL7159460 0.78
SCHEMBL10565248 0.77 LMNA (0.46)
SCHEMBL589942 0.77
SCHEMBL6327834 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8241829-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2012-08-14 US disclosed
US-8241829-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2012-08-14 US disclosed
US-8049042-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2011-11-01 US disclosed
US-8049042-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2011-11-01 US disclosed
US-20110144295-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2011-06-16 US disclosed
US-20110144295-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2011-06-16 US disclosed
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2009-08-06 US disclosed
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2009-08-06 US disclosed
US-20070190449-A1 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2007-08-16 US disclosed
US-20070190449-A1 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2007-08-16 US disclosed
US-5354800-A Emulsion polymerization of addition monomers with hydrophilic and hydrophobic chain transfer agent TAKEDA CHEMICAL INDUSTRIES, LTD. (JP) 1994-10-11 US disclosed