SCHEMBL949905

SCHEMBL949905

CC(C)(OC(=O)C1CC2C=CC1C2)C(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.41

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.41
LMNA P02545 1/20 0.41
ALDH1A1 P00352 7/20 0.38
RAB9A P51151 1/20 0.38
HPGD P15428 1/20 0.36
POLB P06746 3/20 0.36
KMT2A Q03164 2/20 0.36
APEX1 P27695 1/20 0.34
RECQL P46063 1/20 0.34
BLM P54132 1/20 0.34
ESR2 Q92731 1/20 0.34
HSD17B10 Q99714 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
THRB P10828 1/20 0.32
MAPK1 P28482 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14410139 1.00 KDM4E (0.41) KDM4ELMNAALDH1A1RAB9AHPGD
SCHEMBL5944193 0.91 KDM4E (0.44) KDM4ELMNAALDH1A1RAB9AHPGD
SCHEMBL10084473 0.90 KDM4E (0.41) KDM4ELMNAALDH1A1RAB9AHPGD
SCHEMBL2209753 0.86 ALDH1A1 (0.47) KDM4ELMNAALDH1A1RAB9AHPGD
SCHEMBL22263912 0.84 KDM4E (0.46) KDM4ELMNAALDH1A1RAB9AHPGD
SCHEMBL13520495 0.82 KDM4E (0.37) KDM4ELMNAALDH1A1RAB9AHPGD
SCHEMBL13520491 0.82 KDM4E (0.39) KDM4ELMNAALDH1A1RAB9AHPGD
SCHEMBL14492540 0.81 KDM4E (0.41) KDM4ELMNAALDH1A1RAB9AHPGD
SCHEMBL525537 0.81 KDM4E (0.49) KDM4ELMNAALDH1A1RAB9AHPGD
SCHEMBL14534917 0.81 KDM4E (0.49) KDM4ELMNAALDH1A1RAB9AHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10996378-B2 Antireflective film, method of producing antireflective film, and eyeglass type display SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-05-04 US disclosed
US-20190196066-A1 ANTIREFLECTIVE FILM, METHOD OF PRODUCING ANTIREFLECTIVE FILM, AND EYEGLASS TYPE DISPLAY SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-06-27 US disclosed
US-8158330-B2 Resist protective coating composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-17 US disclosed
US-8158330-B2 Resist protective coating composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-17 US disclosed
US-8101335-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-24 US disclosed
US-8101335-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-24 US disclosed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-7868199-B2 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning EUDYNA DEVICES INC. (JP) 2011-01-11 US disclosed
US-7868199-B2 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning EUDYNA DEVICES INC. (JP) 2011-01-11 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20070218402-A1 Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-20 US disclosed
US-20070218402-A1 Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-20 US disclosed
US-20070218402-A1 Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-20 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 KDM4E 3540/4885LMNA 2757/4885ALDH1A1 1887/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.