Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2C9 | P11712 | 1/20 | 0.58 |
| ▸ | GAA | P10253 | 4/20 | 0.57 |
| ▸ | RAB9A | P51151 | 3/20 | 0.57 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.57 |
| ▸ | KMT2A | Q03164 | 6/20 | 0.56 |
| ▸ | MEN1 | O00255 | 4/20 | 0.56 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.56 |
| ▸ | MAPT | P10636 | 5/20 | 0.55 |
| ▸ | LMNA | P02545 | 2/20 | 0.52 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.52 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.52 |
| ▸ | CRHBP | P24387 | 1/20 | 0.52 |
| ▸ | CRHR2 | Q13324 | 1/20 | 0.52 |
| ▸ | PKM | P14618 | 1/20 | 0.50 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.49 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.49 |
| ▸ | PLA2G1B | P04054 | 1/20 | 0.49 |
| ▸ | HPGD | P15428 | 1/20 | 0.49 |
| ▸ | ATG4B | Q9Y4P1 | 1/20 | 0.49 |
| ▸ | NPC1 | O15118 | 2/20 | 0.47 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14617000 | 1.00 | CYP2C9 (0.58) | CYP2C9GAARAB9ASMN1; SMN2KMT2A | |
| SCHEMBL14617001 | 1.00 | CYP2C9 (0.58) | CYP2C9GAARAB9ASMN1; SMN2KMT2A | |
| SCHEMBL14616998 | 0.98 | CYP2C9 (0.60) | CYP2C9GAARAB9ASMN1; SMN2KMT2A | |
| SCHEMBL92000 | 0.83 | RAB9A (0.54) | CYP2C9GAARAB9ASMN1; SMN2KMT2A | |
| SCHEMBL21795534 | 0.82 | PARP1 (0.46) | CYP2C9GAARAB9ASMN1; SMN2KMT2A | |
| SCHEMBL12328527 | 0.79 | KMT2A (0.56) | CYP2C9KMT2AMEN1MAPK1MAPT | |
| SCHEMBL11676830 | 0.76 | KMT2A (0.44) | CYP2C9KMT2AMEN1MAPK1MAPT | |
| SCHEMBL11679560 | 0.76 | KMT2A (0.44) | CYP2C9KMT2AMEN1MAPK1MAPT | |
| SCHEMBL12609517 | 0.74 | MAPT (0.76) | GAASMN1; SMN2KMT2AMEN1MAPK1 | |
| SCHEMBL29058081 | 0.73 | MEN1 (0.50) | CYP2C9SMN1; SMN2KMT2AMEN1MAPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0332158-B1 | RADIATION-SENSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE TO DEEP ULTRAVIOLET RADIATION | HOECHST CELANESE CORPORATION (US) | 1993-05-26 | — | — | EP | claimed |
| US-5104770-A | POSITIVE-WORKING PHOTORESIST COMPOSITIONS | HOECHST CELANESE CORPORATION (US) | 1992-04-14 | — | — | US | claimed |
| EP-0332158-A2 | Radiation-sensitive photoresist composition for exposure to deep ultraviolet radiation | HOECHST CELANESE CORPORATION (US) | 1989-09-13 | — | — | EP | claimed |
| US-9494866-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| US-9411224-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-9411224-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-9405200-B2 | Resist composition and method of forming resist pattern | TOYKO OHKA KOGYO CO., LTD. (JP) | 2016-08-02 | — | — | US | disclosed |
| US-9405200-B2 | Resist composition and method of forming resist pattern | TOYKO OHKA KOGYO CO., LTD. (JP) | 2016-08-02 | — | — | US | disclosed |
| US-9377685-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-06-28 | — | — | US | disclosed |
| US-9377685-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-06-28 | — | — | US | disclosed |
| US-20150147702-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO LTD (JP) | 2015-05-28 | — | — | US | disclosed |
| US-20130084523-A1 | RESIST COMPOSITIOIN AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130078572-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-28 | — | — | US | disclosed |
| US-20130078572-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-28 | — | — | US | disclosed |
| US-20130017500-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130017500-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| EP-1702962-B1 | Ink composition containing a photo-acid and a photo-base generator and processes using them | FUJIFILM CORP (JP) | 2008-12-24 | — | — | EP | disclosed |
| EP-0332158-B1 | RADIATION-SENSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE TO DEEP ULTRAVIOLET RADIATION | HOECHST CELANESE CORPORATION (US) | 1993-05-26 | — | — | EP | disclosed |
| US-5104770-A | POSITIVE-WORKING PHOTORESIST COMPOSITIONS | HOECHST CELANESE CORPORATION (US) | 1992-04-14 | — | — | US | disclosed |
| EP-0332158-A2 | Radiation-sensitive photoresist composition for exposure to deep ultraviolet radiation | HOECHST CELANESE CORPORATION (US) | 1989-09-13 | — | — | EP | disclosed |