SCHEMBL9575138

SCHEMBL9575138

CP(C)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL435429 0.83
SCHEMBL12795845 0.83
SCHEMBL10016042 0.72
SCHEMBL18950221 0.72
SCHEMBL18994864 0.72
SCHEMBL16926192 0.72
SCHEMBL13368968 0.72
SCHEMBL15120429 0.72
SCHEMBL16846600 0.72
SCHEMBL21559804 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 48 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12412749-B2 Etching method and plasma processing system TOKYO ELECTRON LIMITED (JP) 2025-09-09 US claimed
US-20230307243-A1 ETCHING METHOD AND PLASMA PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2023-09-28 US claimed
US-12636258-B2 Drug delivery composition JAPAN SCIENCE AND TECHNOLOGY AGENCY (JP) 2026-05-26 US disclosed
US-20260136859-A1 ETCHING METHOD AND ETCHING DEVICE TOKYO ELECTRON LIMITED (JP) 2026-05-14 US disclosed
US-20260107715-A1 PLASMA PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2026-04-16 US disclosed
US-12532681-B2 Etching method and plasma processing system TOKYO ELECTRON LIMITED (JP) 2026-01-20 US disclosed
US-12412749-B2 Etching method and plasma processing system TOKYO ELECTRON LIMITED (JP) 2025-09-09 US disclosed
US-20250191889-A1 PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2025-06-12 US disclosed
US-20250191927-A1 ETCHING METHOD AND PLASMA PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2025-06-12 US disclosed
US-20250095991-A1 ETCHING METHOD AND PLASMA PROCESSING APPARATUS TOKYO ELECTRON LIMITED (JP) 2025-03-20 US disclosed
WO-2025018161-A1 ETCHING METHOD AND ETCHING DEVICE 東京エレクトロン株式会社 2025-01-23 WO disclosed
EP-2667276-B1 Method of, and apparatus for, providing a gas mixture AIR PROD & CHEM (US) 2017-11-08 EP disclosed
EP-3239352-A1 ELECTROMAGNETIC STEEL SHEET Nippon Steel & Sumitomo Metal Corporation (JP) 2017-11-01 EP disclosed
US-9734922-B2 System and method for operating a modular nuclear fission deflagration wave reactor TERRAPOWER, LLC (US) 2017-08-15 US disclosed
US-9551050-B2 Aluminum alloy with additions of scandium, zirconium and erbium THE BOEING COMPANY (US) 2017-01-24 US disclosed
WO-2014005668-A1 METHOD FOR PRODUCING TRIS (PERFLUOROALKYL) PHOSPHINE OXIDES AND BIS (PERFLUOROALKYL) PHOSPHINIC ACIDS MERCK PATENT GMBH (DE) 2014-01-09 WO disclosed
WO-2011142412-A1 NONAQUEOUS-ELECTROLYTE SECONDARY BATTERY 三菱化学株式会社 (JP) 2011-11-17 WO disclosed
US-20070057522-A1 Tool to pick up microparts KELLER CHRISTPHER G 2007-03-15 US disclosed
US-5180848-A Synthesis of phosphinoacetic acids PHILLIPS PETROLEUM COMPANY (US) 1993-01-19 US disclosed
US-5157153-A Reacting alkyl ethynyl ether or monohaloacetaldehyde acetal with alkali metal base, then with halodihydrocarbylphosphine; adding mineral acid, hydrolyzing PHILLIPS PETROLEUM COMPANY (US) 1992-10-20 US disclosed