SCHEMBL9608658

SCHEMBL9608658

CC(C)C(=O)OC1(C)CCCCC1

nearest known ligand 0.40

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
CYP19A1 P11511 1/20 0.40
MME P08473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14252112 1.00 CYP19A1 (0.40) CYP19A1MME
SCHEMBL12011313 1.00 CYP19A1 (0.40) CYP19A1MME
SCHEMBL11954350 1.00 CYP19A1 (0.40) CYP19A1MME
SCHEMBL9608662 0.98 CYP19A1 (0.38) CYP19A1MME
SCHEMBL15490007 0.93 CYP19A1 (0.34) CYP19A1
SCHEMBL10105671 0.89 FFAR3 (0.31)
SCHEMBL9858628 0.85 CYP19A1 (0.39) CYP19A1
SCHEMBL26453100 0.84 CYP19A1 (0.38) CYP19A1MME
SCHEMBL9626949 0.83 CYP19A1 (0.38) CYP19A1
SCHEMBL1091466 0.83 CYP19A1 (0.38) CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 178 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11407732-B1 Tricyclic degraders of Ikaros and Aiolos C4 THERAPEUTICS, INC. (US) 2022-08-09 US disclosed
WO-2020210630-A1 TRICYCLIC DEGRADERS OF IKAROS AND AIOLOS C4 THERAPEUTICS, INC. (US) 2020-10-15 WO disclosed
US-20190258168-A1 TREATMENT LIQUID AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2019-08-22 US disclosed
US-10175578-B2 Pattern forming method, composition for forming protective film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2019-01-08 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-9984878-B2 Resist under layer film composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-29 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9899218-B2 Resist under layer film composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-20 US disclosed
US-20180022693-A1 COMPOUNDS COMMONWEALTH SCIENTIFIC AND INDUSTRIAL RESEARCH ORGANISATION (AU) 2018-01-25 US disclosed
US-20180024435-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-25 US disclosed
US-20110195362-A1 RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-11 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed
US-7939243-B2 Resin, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-10 US disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 US disclosed
US-20100323305-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-12-23 US disclosed
US-20100323305-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-12-23 US disclosed
US-20100239978-A1 PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD AND RESIST FILM USING THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-23 US disclosed
US-20100159389-A1 RESIN, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-24 US disclosed
US-20080206668-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
CN-1260050-A Polymeric optical articles POSTON OPTICAL FIBER INC (US) 2000-07-12 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11407732-B1 Tricyclic degraders of Ikaros and Aiolos CRBN, IKZF1, IKZF3 CYP19A1 2084/4885MME 1036/4885
US-20180022693-A1 COMPOUNDS ERCC4, NQO1, ERCC5 CYP19A1 152/4885MME 786/4885
US-20110195362-A1 RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE PARG, TOP2A, FRG1 CYP19A1 1216/4885MME 4020/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.