SCHEMBL9610694

SCHEMBL9610694

CCC(C)(C)C(=O)Oc1cccc(O)n1

nearest known ligand 0.35

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
▸ ELANE P08246 1/20 0.35
▸ MAPK8 P45983 1/20 0.34
▸ RIPK1 Q13546 12/20 0.33
▸ CYP1A2 P05177 1/20 0.33
▸ LMNA P02545 1/20 0.33
▸ POLB P06746 1/20 0.33
▸ GABRA1 P14867 1/20 0.32
▸ GABRB2 P47870 1/20 0.32
▸ CA12 O43570 1/20 0.31
▸ CA1 P00915 1/20 0.31
▸ CA2 P00918 1/20 0.31
▸ CA7 P43166 1/20 0.31
▸ CA9 Q16790 1/20 0.31
▸ CA14 Q9ULX7 1/20 0.31
▸ MAPT P10636 1/20 0.31
▸ CYP3A4 P08684 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9610699 0.74 ELANE (0.34) ELANEMAPK8RIPK1
SCHEMBL25454482 0.73 CA1 (0.42) ELANERIPK1LMNAPOLBGABRA1
SCHEMBL186848 0.72 KDM4E (0.37) MAPK8LMNACA12CA1CA2
SCHEMBL2742153 0.71 CYP3A4 (0.59) ELANEPOLBCYP3A4
SCHEMBL25454477 0.71 ALDH1A1 (0.44) ELANERIPK1LMNAGABRA1GABRB2
SCHEMBL19877920 0.71 ELANE (0.33) ELANE
SCHEMBL9610696 0.71 ELANE (0.34) ELANERIPK1CA12CA1CA2
SCHEMBL15113870 0.70 ELANE (0.36) ELANERIPK1POLBCA12CA1
SCHEMBL92310 0.69 ELANE (0.56) ELANE
SCHEMBL131278 0.69 ELANE (0.51) ELANERIPK1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 — — US disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 — — US disclosed
US-9075308-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-07 — — US disclosed
US-8841061-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-23 — — US disclosed
US-8808966-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-19 — — US disclosed
US-8735046-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-05-27 — — US disclosed
US-20140045122-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-13 — — US disclosed
US-8574817-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-05 — — US disclosed
US-20130084529-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 — — US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 — — US disclosed
US-20130084528-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 — — US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 — — US disclosed
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