SCHEMBL965775

SCHEMBL965775

[GeH4].[SiH3][SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL276330 1.00
SCHEMBL48935 0.82
Fluoride SCHEMBL9347415 0.67
SCHEMBL9764920 0.67
Fluoride SCHEMBL9347404 0.67
Phosphine SCHEMBL23752071 0.67
SCHEMBL10710901 0.67
SCHEMBL4542496 0.67
Hydrochloric Acid SCHEMBL3301669 0.67 CA4 (0.33)
Methane SCHEMBL3703632 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 105 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112820823-A Multi-value phase change memory cell, phase change memory, electronic equipment and preparation method 华为技术有限公司 2021-05-18 CN claimed
CN-111290071-A Preparation method of semiconductor core optical fiber 华中科技大学 2020-06-16 CN claimed
CN-102034855-B Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof SHANGHAI HUAHONG NEC ELECT CO 2013-09-11 CN claimed
CN-101944484-B Method for improving side opening of emitter window SHANGHAI HUAHONG NEC ELECT CO 2012-10-03 CN claimed
CN-102034855-A Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof SHANGHAI HUAHONG NEC ELECT CO 2011-04-27 CN claimed
CN-101981703-A Photodetector with valence-mending adsorbate region and a method of fabrication thereof AGENCY SCIENCE TECH & RES 2011-02-23 CN claimed
CN-101944484-A Method for improving side opening of emitter window SHANGHAI HUAHONG NEC ELECT CO 2011-01-12 CN claimed
CN-101908559-A Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof SHANGHAI HUAHONG NEC ELECT CO 2010-12-08 CN claimed
CN-100431114-C Method of fabricating self-aligned bipolar transistor with improved manufacturability and related structure NEWPORT FAB DBA JAZZ SEMICOND (US) 2008-11-05 CN claimed
US-7358527-B1 Systems and methods for testing germanium devices LUXTERA, INC. (US) 2008-04-15 US claimed
CN-1791973-A Method of fabricating self-aligned bipolar transistor with improved manufacturability and related structure NEWPORT FAB DBA JAZZ SEMICOND (US) 2006-06-21 CN claimed
US-12525771-B2 Germanium-on-silicon laser in CMOS technology STMicorelectronics (Crolles 2) SAS (FR) 2026-01-13 US disclosed
CN-114300540-B Source-drain asymmetric ring gate reconfigurable field effect transistor 华东师范大学 2025-04-04 CN disclosed
CN-222690669-U Semiconductor device structure 台湾积体电路制造股份有限公司 2025-03-28 CN disclosed
CN-119256636-A Direct word line contact for 3D memory and method of manufacture 应用材料公司 2025-01-03 CN disclosed
EP-1575097-A2 Semiconductor device with heterojunction NISSAN MOTOR CO., LTD. (JP) 2005-09-14 EP disclosed
EP-1149765-B1 Silicon thermal control blanket NORTHROP GRUMMAN CORP (US) 2005-07-13 EP disclosed
CN-1482680-A Electrostatic discharge protection silicon controlled rectifier (esd-scr) for silicon germanium technologies ��˹��ŵ�� 2004-03-17 CN disclosed
EP-1149765-A2 Silicon thermal control blanket TRW Inc. (US) 2001-10-31 EP disclosed
US-6279857-B1 Silicon thermal control blanket TRW INC. 2001-08-28 US disclosed