Zinc Ion

Zinc Ion

SCHEMBL968843

[Cd].[S-2].[Zn+2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL4757897 0.82 GPR39 (0.33) —
Zinc Ion SCHEMBL29372836 0.82 — —
Zinc Ion SCHEMBL7794532 0.82 GPR39 (0.33) —
Zinc Ion SCHEMBL10427052 0.82 GPR39 (0.33) —
Zinc Ion SCHEMBL9348381 0.82 GPR39 (0.33) —
Zinc Ion SCHEMBL7744965 0.82 GPR39 (0.33) —
Zinc Ion SCHEMBL27539 0.82 — —
Zinc Ion SCHEMBL634081 0.82 — —
Zinc Ion SCHEMBL10632755 0.67 — —
Zinc Ion SCHEMBL855421 0.67 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-4343881-A FOR HIGH SPEED ELECTROGRAPHY SAVIN CORPORATION (US) 1982-08-10 — — US claimed
EP-2405037-A1 Nanoparticles Nanoco Technologies Ltd (GB) 2012-01-11 — — EP disclosed
US-20110108799-A1 NANOPARTICLES NANOCO TECHNOLOGIES LIMITED (GB) 2011-05-12 — — US disclosed
US-7867557-B2 core and shell semiconductor materials; conversion in presence of cluster compound from precursor NANOCO TECHNOLOGIES LIMITED (GB) 2011-01-11 — — US disclosed
US-7521344-B2 Method of forming semiconductor compound film for fabrication of electronic device and film produced by same using a solid solution AERIS CAPITAL SUSTAINABLE IP LTD. (KY) 2009-04-21 — — US disclosed
US-20080220593-A1 Nanoparticles NANOCO TECHNOLOGIES LIMITED (GB) 2008-09-11 — — US disclosed
EP-1913182-A1 NANOPARTICLES Nanoco Technologies Limited (GB) 2008-04-23 — — EP disclosed
WO-2007020416-A1 NANOPARTICLES NANOCO TECHNOLOGIES LIMITED (GB) 2007-02-22 — — WO disclosed
JP-2006347877-A CADMIUM-ZINC-SULFIDE NANOCABLE, AND METHOD FOR PRODUCING THE SAME NATIONAL INSTITUTE FOR MATERIALS SCIENCE 2006-12-28 — — JP disclosed
US-20060189155-A1 Method of Forming Semiconductor Compound Film For Fabrication of Electronic Device and Film Produced by Same BASOL BULENT M 2006-08-24 — — US disclosed
US-7091136-B2 Method of forming semiconductor compound film for fabrication of electronic device and film produced by same AERIS CAPITAL SUSTAINABLE IP LTD. (KY) 2006-08-15 — — US disclosed
US-20060178012-A1 Method of Forming Semiconductor Compound Film for Fabrication of Electronic Device and Film Produced By Same AERIS CAPITAL SUSTAINABLE IP LTD. (KY) 2006-08-10 — — US disclosed
US-20060165911-A1 Method of Forming Semiconductor Compound Film For Fabrication of Electronic Device And Film Produced by Same BASOL BULENT M 2006-07-27 — — US disclosed
US-20040219730-A1 Method of forming semiconductor compound film for fabrication of electronic device and film produced by same AERIS CAPITAL SUSTAINABLE IP LTD. (KY) 2004-11-04 — — US disclosed
US-20030068511-A1 Transparent, multilayer, biaxially oriented polyester film, and process for its production MITSUBISHI POLYESTER FILM GMBH (DE) 2003-04-10 — — US disclosed
US-4354102-A Cursor apparatus for interactive graphic display system THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE (US) 1982-10-12 — — US disclosed
US-4343881-A FOR HIGH SPEED ELECTROGRAPHY SAVIN CORPORATION (US) 1982-08-10 — — US disclosed
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