SCHEMBL974339

SCHEMBL974339

O=S(=O)(O)C(F)(F)CC1CC2CCC1C2.[NaH]

nearest known ligand 0.36

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.36
CYP2D6 P10635 1/20 0.36
CYP2C9 P11712 1/20 0.36
CYP2C19 P33261 1/20 0.36
HIF1A Q16665 1/20 0.36
HSD17B10 Q99714 1/20 0.36
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
EPHX2 P34913 2/20 0.32
POLB P06746 1/20 0.31
SCN9A Q15858 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL668486 0.98 CYP1A2 (0.37) CYP1A2CYP2D6CYP2C9CYP2C19HIF1A
SCHEMBL973686 0.88 MEN1 (0.33) CYP1A2CYP2D6CYP2C9CYP2C19HIF1A
SCHEMBL23641340 0.83 CYP1A2 (0.31) CYP1A2CYP2D6CYP2C9CYP2C19HIF1A
SCHEMBL12256435 0.83 MEN1 (0.37) CYP1A2CYP2D6CYP2C9CYP2C19HIF1A
SCHEMBL18785775 0.82 CYP1A2 (0.35) CYP1A2CYP2D6CYP2C9CYP2C19HIF1A
SCHEMBL18785293 0.82 CYP1A2 (0.35) CYP1A2CYP2D6CYP2C9CYP2C19HIF1A
SCHEMBL13259885 0.82 CYP1A2 (0.35) CYP1A2CYP2D6CYP2C9CYP2C19HIF1A
SCHEMBL12307786 0.82 CYP1A2 (0.35) CYP1A2CYP2D6CYP2C9CYP2C19HIF1A
SCHEMBL2536302 0.81 MEN1 (0.35) CYP1A2CYP2D6CYP2C9CYP2C19HIF1A
SCHEMBL14607359 0.81 MEN1 (0.37) CYP1A2CYP2D6CYP2C9CYP2C19HIF1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8043786-B2 Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions JSR CORPORATION (JP) 2011-10-25 US disclosed
US-7871761-B2 Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-18 US disclosed
US-20080032231-A1 Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern SHIN-ETSU CHEMICAL CO., LTD. 2008-02-07 US disclosed
US-20070054214-A1 Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions JSR CORPORATION (JP) 2007-03-08 US disclosed
EP-1600437-A1 ACID GENERATORS, SULFONIC ACIDS, SULFONYL HALIDES, AND RADIATION-SENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2005-11-30 EP disclosed