⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9615417 | 0.71 | — | — | |
| SCHEMBL461163 | 0.71 | — | — | |
| SCHEMBL29771113 | 0.71 | — | — | |
| SCHEMBL1260340 | 0.50 | — | — | |
| Potassium Ion SCHEMBL11651984 | 0.50 | — | — | |
| SCHEMBL1629906 | 0.50 | — | — | |
| SCHEMBL297127 | 0.50 | — | — | |
| SCHEMBL5877582 | 0.50 | — | — | |
| SCHEMBL18115792 | 0.50 | — | — | |
| SCHEMBL21448829 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12501657-B2 | Selective silicide for stacked multi-gate device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-16 | — | — | US | claimed |
| US-20250351442-A1 | SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | claimed |
| US-20240297228-A1 | SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-05 | — | — | US | claimed |
| CN-118231349-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2024-06-21 | — | — | CN | claimed |
| EP-0130416-B1 | A PROCESS FOR MAKING AN OHMIC CONTACT TO AN N-TYPE CONDUCTIVITY GROUP III-V SEMICONDUCTOR COMPOUND AND A SEMICONDUCTOR DEVICE HAVING SUCH AN OHMIC CONTACT | International Business Machines Corporation (US) | 1988-10-12 | — | — | EP | claimed |
| US-20260123041-A1 | SOURCE/DRAIN REGIONS AND CONTACT PLUGS IN STACKING TRANSISTORS AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-04-30 | — | — | US | disclosed |
| US-12501657-B2 | Selective silicide for stacked multi-gate device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-16 | — | — | US | disclosed |
| US-20250351442-A1 | SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-12451399-B2 | Integrated thermal solution to enable operation of embedded processors in sub-zero temperatures | INTEL CORPORATION (US) | 2025-10-21 | — | — | US | disclosed |
| US-20240423104-A1 | Nanowire Avalanche Photodetector | THE BOEING COMPANY | 2024-12-19 | — | — | US | disclosed |
| US-20240297228-A1 | SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-05 | — | — | US | disclosed |
| CN-118231349-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2024-06-21 | — | — | CN | disclosed |
| CN-104685639-B | Photo-electric conversion element | SHARP CORP. (JP) | 2016-11-30 | — | — | CN | disclosed |
| US-20150221791-A1 | PHOTOELECTRIC CONVERSION ELEMENT | SHARP KABUSHIKI KAISHA (JP) | 2015-08-06 | — | — | US | disclosed |
| CN-104685639-A | Photoelectric conversion element | SHARP KK | 2015-06-03 | — | — | CN | disclosed |
| US-5162891-A | Group III-V heterostructure devices having self-aligned graded contact diffusion regions and method for fabricating same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1992-11-10 | — | — | US | disclosed |
| US-5158896-A | Method for fabricating group III-V heterostructure devices having self-aligned graded contact diffusion regions | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1992-10-27 | — | — | US | disclosed |
| EP-0166342-B1 | METHOD OF PRODUCING A GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR DEVICE | International Business Machines Corporation (US) | 1990-08-29 | — | — | EP | disclosed |
| EP-0130416-B1 | A PROCESS FOR MAKING AN OHMIC CONTACT TO AN N-TYPE CONDUCTIVITY GROUP III-V SEMICONDUCTOR COMPOUND AND A SEMICONDUCTOR DEVICE HAVING SUCH AN OHMIC CONTACT | International Business Machines Corporation (US) | 1988-10-12 | — | — | EP | disclosed |
| EP-0166342-A2 | Method of producing a gallium arsenide field effect transistor device | International Business Machines Corporation (US) | 1986-01-02 | — | — | EP | disclosed |