⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29889134 | 0.71 | — | — | |
| SCHEMBL9615417 | 0.71 | — | — | |
| SCHEMBL6559802 | 0.71 | — | — | |
| SCHEMBL569300 | 0.50 | — | — | |
| SCHEMBL297340 | 0.50 | — | — | |
| SCHEMBL74539 | 0.50 | — | — | |
| SCHEMBL5877925 | 0.50 | — | — | |
| SCHEMBL6139908 | 0.50 | — | — | |
| Hydrochloric Acid SCHEMBL72335 | 0.50 | — | — | |
| SCHEMBL21448829 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 95 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3320562-B1 | FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM | ENTEGRIS INC (US) | 2024-08-28 | — | — | EP | claimed |
| US-11777016-B2 | Method of forming backside power rails | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-03 | — | — | US | claimed |
| CN-109841498-B | Semiconductor device and method for manufacturing the same | 爱思开海力士有限公司 | 2023-09-19 | — | — | CN | claimed |
| CN-115513210-A | Memory, manufacturing method thereof and memory system | 长江存储科技有限责任公司 | 2022-12-23 | — | — | CN | claimed |
| US-20220336641-A1 | Method of Forming Backside Power Rails | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-20 | — | — | US | claimed |
| CN-107851660-B | Formulations for selective etching of silicon germanium relative to germanium | 恩特格里斯公司 | 2022-02-01 | — | — | CN | claimed |
| US-11094778-B2 | Capacitor with high work function interface layer | SK Hynix Inc. (KR) | 2021-08-17 | — | — | US | claimed |
| US-10957547-B2 | Formulations to selectively etch silicon germanium relative to germanium | ENTEGRIS, INC. (US) | 2021-03-23 | — | — | US | claimed |
| US-20200279906-A1 | CAPACITOR WITH HIGH WORK FUNCTION INTERFACE LAYER | SK HYNIX INC (KR) | 2020-09-03 | — | — | US | claimed |
| US-10475658-B2 | Formulations to selectively etch silicon and germanium | ENTEGRIS, INC. (US) | 2019-11-12 | — | — | US | claimed |
| US-10347711-B2 | Semiconductor device and method for fabricating the same | SK Hynix Inc. (KR) | 2019-07-09 | — | — | US | claimed |
| CN-109841498-A | Semiconductor devices and its manufacturing method | 爱思开海力士有限公司 | 2019-06-04 | — | — | CN | claimed |
| US-20190165087-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | SK Hynix Inc. (KR) | 2019-05-30 | — | — | US | claimed |
| US-20180197746-A1 | FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2018-07-12 | — | — | US | claimed |
| EP-3320562-A1 | FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM | Entegris, Inc. (US) | 2018-05-16 | — | — | EP | claimed |
| US-20160343576-A1 | FORMULATIONS TO SELECTIVELY ETCH SILICON AND GERMANIUM | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2016-11-24 | — | — | US | claimed |
| WO-2011050108-A1 | HIGH EFFICIENCY THERMOELECTRIC CONVERTER | LOCKHEED MARTIN CORPORATION (US) | 2011-04-28 | — | — | WO | claimed |
| US-20110088739-A1 | HIGH EFFICIENCY THERMOELECTRIC CONVERTER | LOCKHEED MARTIN CORPORATION (US) | 2011-04-21 | — | — | US | claimed |
| US-5162246-A | Shallow source and drain junction | NORTH CAROLINA STATE UNIVERSITY (US) | 1992-11-10 | — | — | US | claimed |
| US-5089872-A | Self-aligned germanium or refractory metal germanide contacts to source and drain | NORTH CAROLINA STATE UNIVERSITY | 1992-02-18 | — | — | US | claimed |