Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LTA4H | P09960 | 2/20 | 0.37 |
| ▸ | CYP1A2 | P05177 | 4/20 | 0.36 |
| ▸ | CYP2C9 | P11712 | 4/20 | 0.36 |
| ▸ | CYP2C19 | P33261 | 4/20 | 0.36 |
| ▸ | CYP19A1 | P11511 | 3/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.36 |
| ▸ | MCHR1 | Q99705 | 1/20 | 0.36 |
| ▸ | TLR8 | Q9NR97 | 1/20 | 0.36 |
| ▸ | DHFR | P00374 | 1/20 | 0.35 |
| ▸ | CYP2D6 | P10635 | 4/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.35 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.35 |
| ▸ | GPBAR1 | Q8TDU6 | 1/20 | 0.35 |
| ▸ | CYSLTR2 | Q9NS75 | 1/20 | 0.35 |
| ▸ | CYSLTR1 | Q9Y271 | 1/20 | 0.35 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17937564 | 0.88 | EGFR (0.43) | CYP1A2CYP2C19CYP2D6L3MBTL1 | |
| SCHEMBL17937845 | 0.88 | KMT2A (0.44) | TLR8TDP1SMN1; SMN2 | |
| SCHEMBL21409813 | 0.88 | TSHR (0.49) | CYP1A2CYP2C9CYP2C19TSHRMCHR1 | |
| SCHEMBL974558 | 0.88 | KMT2A (0.33) | TSHRMCHR1TLR8DHFRSMN1; SMN2 | |
| SCHEMBL431649 | 0.86 | LTA4H (0.47) | LTA4HCYP1A2CYP2C9CYP2C19CYP19A1 | |
| SCHEMBL23493421 | 0.84 | TP53 (0.40) | LTA4HCYP1A2CYP2C9CYP2C19CYP19A1 | |
| SCHEMBL29434629 | 0.84 | TP53 (0.40) | LTA4HCYP1A2CYP2C9CYP2C19CYP19A1 | |
| SCHEMBL977974 | 0.83 | CYP2D6 (0.39) | LTA4HCYP1A2CYP2C9CYP2C19CYP19A1 | |
| SCHEMBL9228586 | 0.82 | LTA4H (0.44) | LTA4HCYP1A2CYP2C9CYP2C19CYP19A1 | |
| SCHEMBL29434576 | 0.82 | HPGD (0.38) | CYP1A2CYP2C9CYP2C19TSHRL3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 108 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1520891-B1 | FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM | JSR CORP (JP) | 2019-05-01 | — | — | EP | disclosed |
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329478-B2 | Polysiloxane composition and pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-9233840-B2 | Method for improving self-assembled polymer features | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2016-01-12 | — | — | US | disclosed |
| US-9126231-B2 | Insulation pattern-forming method and insulation pattern-forming material | JSR CORPORATION (JP) | 2015-09-08 | — | — | US | disclosed |
| US-9116427-B2 | Composition for forming resist underlayer film and pattern-forming method | JSR CORPORATION (JP) | 2015-08-25 | — | — | US | disclosed |
| US-20030059550-A1 | Method of film formation, insulating film, and substrate for semiconductor | JSR CORPORATION (JP) | 2003-03-27 | — | — | US | disclosed |
| EP-1295924-A2 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR Corporation (JP) | 2003-03-26 | — | — | EP | disclosed |
| US-6495264-B2 | HYDROLYSIS AND CONDENSATION OF SILANE COMPOUND IN PRESENCE OF WATER AND TETRAALKYLAMMONIUM HYDROXIDES, ALICYCLIC AMINES, AND METAL HYDROXIDES IN SOLVENT FOR FORMING DIELECTRIC LAYER FOR SEMICONDUCTORS | JSR CORPORATION (JP) | 2002-12-17 | — | — | US | disclosed |
| US-6472079-B2 | PRODUCT OF HYDROLYSIS AND CONDENSATION OF AN ORGANOSILICON COMPOUND; 1A OR 2A COMPOUND, ESPECIALLY CARBOXYLIC SALT; SOLVENT; EXCELLENT CRACKING RESISTANCE AFTER A PCT (PRESSURE COOKER TEST). | JSR CORPORATION (JP) | 2002-10-29 | — | — | US | disclosed |
| US-6465368-B2 | DISSOLVING POLYMER IN SOLVENT; FORMING DIELECTRIC FILMS | JSR CORPORATION (JP) | 2002-10-15 | — | — | US | disclosed |
| US-20020142586-A1 | Method of forming dual damascene structure | JSR CORPORATION (JP) | 2002-10-03 | — | — | US | disclosed |
| US-20020086167-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2002-07-04 | — | — | US | disclosed |
| US-6410150-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-20020045693-A1 | Composition for film formation, method of film formation and silica-based film | JSR CORPORATION (JP) | 2002-04-18 | — | — | US | disclosed |
| US-20010051446-A1 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film | JSR CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |