SCHEMBL97804

SCHEMBL97804

CCC(=O)OC(C)(C)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 2/20 0.37
KMT2A Q03164 4/20 0.36
MEN1 O00255 3/20 0.36
MAPK1 P28482 1/20 0.36
ALDH1A1 P00352 1/20 0.36
LMNA P02545 1/20 0.35
CA12 O43570 1/20 0.35
CA2 P00918 1/20 0.35
CA7 P43166 1/20 0.35
CA9 Q16790 1/20 0.35
CA14 Q9ULX7 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
CYP17A1 P05093 1/20 0.34
CYP19A1 P11511 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25968927 0.87 EPHX2 (0.43) EPHX2KMT2AMEN1MAPK1ALDH1A1
SCHEMBL12197283 0.86 EPHX2 (0.41) EPHX2KMT2AMEN1MAPK1ALDH1A1
SCHEMBL12058487 0.86 EPHX2 (0.37) EPHX2KMT2AMEN1MAPK1ALDH1A1
SCHEMBL13527830 0.84 EPHX2 (0.36) EPHX2KMT2AMEN1MAPK1ALDH1A1
SCHEMBL4547708 0.84 EPHX2 (0.39) EPHX2KMT2AMEN1MAPK1ALDH1A1
SCHEMBL4547707 0.84 EPHX2 (0.36) EPHX2KMT2AMEN1MAPK1ALDH1A1
SCHEMBL14839167 0.83 EPHX2 (0.35) EPHX2KMT2AMEN1MAPK1ALDH1A1
SCHEMBL2168089 0.83 EPHX2 (0.38) EPHX2KMT2AMEN1MAPK1ALDH1A1
SCHEMBL13588099 0.81 EPHX2 (0.35) EPHX2KMT2AMEN1MAPK1ALDH1A1
SCHEMBL13609148 0.81 EPHX2 (0.38) EPHX2KMT2AMEN1MAPK1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-20230350296-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-02 US disclosed
US-20230314944-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-05 US disclosed
US-20230288804-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-14 US disclosed
US-11709427-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-25 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20100227273-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US disclosed
US-7615330-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-20090274977-A1 COMPOUND AND RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2009-11-05 US disclosed
US-20090274977-A1 COMPOUND AND RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2009-11-05 US disclosed
EP-2100870-A1 COMPOUND AND RADIATION-SENSITIVE COMPOSITION JSR Corporation (JP) 2009-09-16 EP disclosed
EP-2009498-A1 Pattern forming method FUJIFILM Corporation (JP) 2008-12-31 EP disclosed
EP-1491560-B1 PROCESS FOR THE PRODUCTION OF HIGH-MOLECULAR COMPOUNDS FOR PHOTORESIST DAICEL CHEM (JP) 2007-11-21 EP disclosed
US-20070224540-A1 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709427-B2 Positive resist composition and pattern forming process EWSR1, PARG, VIM EPHX2 4575/4885KMT2A 1022/4885MEN1 2592/4885
US-20090274977-A1 COMPOUND AND RADIATION-SENSITIVE COMPOSITION RAD51, SLC11A2, XRCC6 EPHX2 3619/4885KMT2A 1465/4885MEN1 135/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.