SCHEMBL984800

SCHEMBL984800

CS(OS(=O)(=O)C(F)(F)F)(C1CCCCC1)C1CCCCC1=O

nearest known ligand 0.39

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.39
KMT2A Q03164 1/20 0.34
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
CA4 P22748 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5972736 0.86 MAPT (0.33) MAPTKMT2A
SCHEMBL5972835 0.85 MAPT (0.32) MAPTCA1CA2
SCHEMBL642592 0.83 MAPT (0.41) MAPTKMT2ACA1CA2CA4
SCHEMBL515933 0.82 MAPT (0.43) MAPTKMT2ACA1CA2CA4
SCHEMBL5907888 0.79 MAPT (0.34) MAPT
SCHEMBL8876738 0.76 MAPT (0.38) MAPTCA1CA2CA4
SCHEMBL546970 0.76 CHRM2 (0.30)
SCHEMBL6725040 0.75 MAPT (0.43) MAPTCA1CA2
SCHEMBL7204129 0.74 MAPT (0.33) MAPT
SCHEMBL547423 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
US-9598520-B2 Radiation-sensitive resin composition, polymer and method for forming a resist pattern JSR CORPORATION (JP) 2017-03-21 US disclosed
EP-2503392-B1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2015-04-15 EP disclosed
US-8562844-B2 Methods using block co-polymer self-assembly for sub-lithographic patterning MICRON TECHNOLOGY, INC. (US) 2013-10-22 US disclosed
US-20120295197-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND METHOD FOR FORMING A RESIST PATTERN JSR CORPORATION (JP) 2012-11-22 US disclosed
EP-1961739-B1 NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION JSR CORP (JP) 2012-10-17 EP disclosed
US-8288073-B2 Pattern forming method JSR CORPORATION (JP) 2012-10-16 US disclosed
US-8263315-B2 Pattern-forming method JSR CORPORATION (JP) 2012-09-11 US disclosed
US-8026039-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2011-09-27 US disclosed
US-7964107-B2 Methods using block copolymer self-assembly for sub-lithographic patterning MICRON TECHNOLOGY, INC. (US) 2011-06-21 US disclosed
US-20030091929-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-15 US disclosed
US-20030087181-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-08 US disclosed
US-20030054289-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-03-20 US disclosed
US-20030031952-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-02-13 US disclosed
US-6461788-B1 COMPOUNDS HAVING SPECIFIC CYCLOHEXANELACTONE STRUCTURE FORM POLYMERS HAVING HIGH TRANSPARENCY AT SHORT WAVELENGTH SUCH AS ARGON FLUORIDE EXCIMER LASER, EXCELLENT DRY ETCHING RESISTANCE AND SUBSTRATE ADHERENCE; USEFUL FOR RESISTS MARUZEN PETROCHEMICAL CO., LTD. (JP) 2002-10-08 US disclosed
US-6462158-B1 USEFUL AS BASE POLYMERS FOR RESIST MATERIALS FOR AN EXPOSURE LIGHT SOURCE OF A SHORT WAVELENGTH MARUZEN PETROCHEMICAL CO., LTD. (JP) 2002-10-08 US disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
US-20020091215-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-11 US disclosed
US-20020009667-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
US-20010033989-A1 Novel polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed