SCHEMBL9891463

SCHEMBL9891463

CCC(C)(C)C(=O)OC(CS(=O)(=O)O)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17988368 0.88 ELANE (0.34)
SCHEMBL2740724 0.86
SCHEMBL2608648 0.85 PRKCA (0.36)
SCHEMBL25844857 0.84
SCHEMBL25844661 0.84
SCHEMBL25844691 0.83
SCHEMBL25844893 0.83
SCHEMBL25844860 0.82
SCHEMBL25844719 0.82
SCHEMBL25844666 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230273519-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2023-08-31 US disclosed
US-9778567-B2 Resist composition, method of forming resist pattern, polymeric compound, compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9523914-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-20 US disclosed
US-9411227-B2 Resist composition, method of forming resist pattern, compound, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2016-08-09 US disclosed
US-9360753-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-07 US disclosed
US-9354515-B2 Resist composition, acid generator, polymeric compound and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-05-31 US disclosed
US-20160147150-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-26 US disclosed
US-9250518-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-20150198881-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2015-07-16 US disclosed
US-9057949-B2 Patterning process, resist composition, polymer, and polymerizable ester compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-16 US disclosed
US-20140080055-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 US disclosed
US-20130252180-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-26 US disclosed
US-20130224656-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-08-29 US disclosed
US-20130157194-A1 PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-20 US disclosed
US-20130157201-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-20 US disclosed
US-20130143159-A1 RESIST COMPOSITION FOR EUV OR EB, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-06 US disclosed
US-20130029270-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120141938-A1 BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-07 US disclosed
US-20110129777-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-02 US disclosed