SCHEMBL9908439

SCHEMBL9908439

CC(C)CC[Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9908441 0.75 LMNA (0.30) LMNA
SCHEMBL20438760 0.73 LMNA (0.33) LMNA
SCHEMBL4341315 0.73
SCHEMBL9908438 0.71
SCHEMBL11585547 0.69 LMNA (0.35) LMNA
SCHEMBL9908434 0.69
SCHEMBL25374038 0.69
SCHEMBL28958675 0.69
SCHEMBL28751396 0.69 LMNA (0.30) LMNA
SCHEMBL10699755 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9448482-B2 Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-20150253673-A1 PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-9052603-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-09 US disclosed
US-20140234785-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-21 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-7202013-B2 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-10 US disclosed
US-7163778-B2 Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-16 US disclosed