SCHEMBL9908445

SCHEMBL9908445

C=COC(C(F)(F)F)C(F)(F)C(O)(C(F)F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24445900 0.81
SCHEMBL15495716 0.78
SCHEMBL29006715 0.78
SCHEMBL3194033 0.76
SCHEMBL26548468 0.75
SCHEMBL9909416 0.73
SCHEMBL6107434 0.72 CA1 (0.31)
SCHEMBL14133962 0.70
SCHEMBL26548459 0.69 TSHR (0.31)
SCHEMBL14134188 0.69 TSHR (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-20170003590-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-05 US disclosed
US-20160363866-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-15 US disclosed
US-9448482-B2 Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-9250523-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-20150253673-A1 PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-9086625-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-21 US disclosed
US-9040223-B2 Resist composition, patterning process and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20080020290-A1 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20070275326-A1 Resist protective film composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-29 US disclosed
US-20070003867-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-04 US disclosed
US-20070003867-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-04 US disclosed