⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14148421 | 0.77 | — | — | |
| SCHEMBL29006715 | 0.76 | — | — | |
| SCHEMBL9908445 | 0.73 | — | — | |
| SCHEMBL14148156 | 0.71 | — | — | |
| SCHEMBL6107434 | 0.71 | CA1 (0.31) | — | |
| SCHEMBL14148159 | 0.69 | TSHR (0.32) | — | |
| SCHEMBL14147764 | 0.69 | — | — | |
| SCHEMBL14510833 | 0.63 | — | — | |
| SCHEMBL14148100 | 0.60 | TSHR (0.36) | — | |
| SCHEMBL13236681 | 0.59 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8323872-B2 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-04 | — | — | US | disclosed |
| US-8198016-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| US-8105764-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-8043788-B2 | Alkali soluble resin; immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-25 | — | — | US | disclosed |
| US-7759047-B2 | Resist protective film composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-20 | — | — | US | disclosed |
| US-7655378-B2 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-02 | — | — | US | disclosed |
| US-20090286188-A1 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-19 | — | — | US | disclosed |
| US-7598016-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-06 | — | — | US | disclosed |
| US-20090081595-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-03-26 | — | — | US | disclosed |
| US-20080241736-A1 | Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080020290-A1 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-24 | — | — | US | disclosed |