SCHEMBL9908447

SCHEMBL9908447

COCOC(CC1CC2CCC1C2)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12009289 0.85
SCHEMBL13758549 0.84 EPHX2 (0.32)
SCHEMBL12249899 0.84 MEN1 (0.30)
SCHEMBL14493128 0.80 MEN1 (0.33)
SCHEMBL14493127 0.78
SCHEMBL13380580 0.78 MEN1 (0.31)
SCHEMBL15237620 0.78 MEN1 (0.30)
SCHEMBL12009894 0.77 ALDH1A1 (0.35)
SCHEMBL13764366 0.77
SCHEMBL14559772 0.75 MEN1 (0.37)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8252508-B2 Positive photosensitive composition and method of forming resist pattern FUJIFILM CORPORATION (JP) 2012-08-28 US disclosed
US-8252508-B2 Positive photosensitive composition and method of forming resist pattern FUJIFILM CORPORATION (JP) 2012-08-28 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-7867697-B2 Positive photosensitive composition and method of forming resist pattern FUJIFILM CORPORATION (JP) 2011-01-11 US disclosed
US-7867697-B2 Positive photosensitive composition and method of forming resist pattern FUJIFILM CORPORATION (JP) 2011-01-11 US disclosed
US-20100261117-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN FUJIFILM CORPORATION (JP) 2010-10-14 US disclosed
US-20100261117-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN FUJIFILM CORPORATION (JP) 2010-10-14 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-7579131-B2 Positive resist composition and method of forming resist pattern using the same FUJIFILM CORPORATION (JP) 2009-08-25 US disclosed
US-7579131-B2 Positive resist composition and method of forming resist pattern using the same FUJIFILM CORPORATION (JP) 2009-08-25 US disclosed
US-7232917-B2 Cyclic fluorine compounds, polymerizable fluoromonomers, fluoropolymers, and resist materials containing the fluoropolymers and method for pattern formation CENTRAL GLASS COMPANY, LIMITED (JP) 2007-06-19 US disclosed
US-7232917-B2 Cyclic fluorine compounds, polymerizable fluoromonomers, fluoropolymers, and resist materials containing the fluoropolymers and method for pattern formation CENTRAL GLASS COMPANY, LIMITED (JP) 2007-06-19 US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 US disclosed
US-7192685-B2 Positive resist composition and method of forming resist pattern using the same. FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-7192685-B2 Positive resist composition and method of forming resist pattern using the same. FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed