Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 13/20 | 0.40 |
| ▸ | MEN1 | O00255 | 1/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.35 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.32 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.32 |
| ▸ | HMGCR | P04035 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL47435 | 0.88 | CYP17A1 (0.34) | HSD11B1CYP17A1CYP19A1 | |
| SCHEMBL15113789 | 0.86 | HSD11B1 (0.37) | HSD11B1CYP17A1CYP19A1 | |
| SCHEMBL13432488 | 0.85 | CYP17A1 (0.33) | CYP17A1CYP19A1 | |
| SCHEMBL2625654 | 0.85 | EPHX2 (0.32) | HSD11B1KMT2ACYP17A1CYP19A1 | |
| SCHEMBL14466039 | 0.85 | EPHX2 (0.33) | MEN1KMT2ACYP17A1CYP19A1 | |
| SCHEMBL17404442 | 0.85 | CYP17A1 (0.30) | CYP17A1CYP19A1 | |
| SCHEMBL17789364 | 0.84 | CYP17A1 (0.32) | HSD11B1CYP17A1CYP19A1 | |
| SCHEMBL17789368 | 0.84 | CYP17A1 (0.32) | CYP17A1CYP19A1 | |
| SCHEMBL25631188 | 0.81 | CYP17A1 (0.31) | CYP17A1CYP19A1 | |
| SCHEMBL47418 | 0.81 | CYP17A1 (0.31) | CYP17A1CYP19A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9423689-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-23 | — | — | US | disclosed |
| US-9250523-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-02 | — | — | US | disclosed |
| US-9244344-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, resist film, pattern forming method, electronic device manufacturing method, and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2016-01-26 | — | — | US | disclosed |
| US-9201300-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-01 | — | — | US | disclosed |
| US-9140981-B2 | Actinic-ray-sensitive or radiation-sensitive resin composition, and resist film using the same, pattern forming method, electronic device manufacturing method, and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2015-09-22 | — | — | US | disclosed |
| US-9120288-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for preparing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2015-09-01 | — | — | US | disclosed |
| US-9086625-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-21 | — | — | US | disclosed |
| US-20150093692-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM USED THEREFOR, AND ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE USING THE SAMEDEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-04-02 | — | — | US | disclosed |
| US-8980527-B2 | Pattern forming process and resist compostion | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8980527-B2 | Pattern forming process and resist compostion | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8043788-B2 | Alkali soluble resin; immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-25 | — | — | US | disclosed |
| US-7642034-B2 | Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-05 | — | — | US | disclosed |
| US-20090286188-A1 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-19 | — | — | US | disclosed |
| US-20090081595-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-03-26 | — | — | US | disclosed |
| US-20090011365-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-01-08 | — | — | US | disclosed |
| US-7455952-B2 | Patterning process and resist overcoat material | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-25 | — | — | US | disclosed |
| US-7354693-B2 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-04-08 | — | — | US | disclosed |
| US-20070178407-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070122741-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070003867-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-04 | — | — | US | disclosed |