⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL25526887 | 0.90 | — | — | |
| SCHEMBL9916146 | 0.90 | — | — | |
| SCHEMBL9925263 | 0.87 | — | — | |
| SCHEMBL18845204 | 0.86 | — | — | |
| SCHEMBL16369125 | 0.86 | — | — | |
| SCHEMBL14330860 | 0.85 | — | — | |
| SCHEMBL25526811 | 0.83 | — | — | |
| SCHEMBL17339978 | 0.83 | — | — | |
| SCHEMBL775673 | 0.83 | ALDH1A1 (0.33) | — | |
| SCHEMBL18785987 | 0.83 | ALDH1A1 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2021039391-A1 | ACTIVE LIGHT RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE | 富士フイルム株式会社 | 2021-03-04 | — | — | WO | disclosed |
| WO-2019187804-A1 | ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND POLYESTER | 富士フイルム株式会社 | 2019-10-03 | — | — | WO | disclosed |
| US-9360753-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-07 | — | — | US | disclosed |
| US-9360753-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-07 | — | — | US | disclosed |
| US-8658343-B2 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-25 | — | — | US | disclosed |
| US-8658343-B2 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-25 | — | — | US | disclosed |
| US-20130029270-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20130029270-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20120148953-A1 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120148953-A1 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |