⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1262491 | 0.82 | — | — | |
| SCHEMBL76499 | 0.82 | — | — | |
| SCHEMBL6539312 | 0.67 | — | — | |
| SCHEMBL8168121 | 0.67 | — | — | |
| SCHEMBL36810 | 0.67 | — | — | |
| SCHEMBL202191 | 0.67 | — | — | |
| SCHEMBL6540601 | 0.67 | — | — | |
| SCHEMBL17766196 | 0.67 | — | — | |
| SCHEMBL6539485 | 0.67 | KDM3A (0.33) | — | |
| SCHEMBL6004088 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9443761-B2 | Methods for fabricating integrated circuits having device contacts | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2016-09-13 | — | — | US | claimed |
| US-20160035623-A1 | INTEGRATED CIRCUITS HAVING DEVICE CONTACTS AND METHODS FOR FABRICATING THE SAME | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2016-02-04 | — | — | US | claimed |
| WO-2008118222-A2 | SELECTIVE ELECTROLESS DEPOSITION FOR SOLAR CELLS | APPLIED MATERIALS, INC. (US) | 2008-10-02 | — | — | WO | claimed |
| US-20080121276-A1 | SELECTIVE ELECTROLESS DEPOSITION FOR SOLAR CELLS | APPLIED MATERIALS, INC. | 2008-05-29 | — | — | US | claimed |
| US-20080079530-A1 | INTEGRATED MAGNETIC FEATURES | APPLIED MATERIALS, INC. | 2008-04-03 | — | — | US | claimed |
| US-20060252252-A1 | Electroless deposition processes and compositions for forming interconnects | APPLIED MATERIALS, INC. | 2006-11-09 | — | — | US | claimed |
| WO-2006102180-A2 | CONTACT METALLIZATION METHODS AND PROCESSES | APPLIED MATERIALS, INC. (US) | 2006-09-28 | — | — | WO | claimed |
| US-6015747-A | Method of metal/polysilicon gate formation in a field effect transistor | ADVANCED MICRO DEVICE (US) | 2000-01-18 | — | — | US | claimed |
| WO-2024144843-A1 | EFFICIENT AUTOCATALYTIC METALLIZATION OF POLYMERIC SURFACES | APPLIED MATERIALS, INC. (US) | 2024-07-04 | — | — | WO | disclosed |
| US-20240222142-A1 | EFFICIENT AUTOCATALYTIC METALLIZATION OF POLYMERIC SURFACES | APPLIED MATERIALS, INC. | 2024-07-04 | — | — | US | disclosed |
| CN-112996933-B | Electroless nickel plating solution | 德国艾托特克公司 | 2023-08-08 | — | — | CN | disclosed |
| CN-112978815-B | Preparation method of nickel-tungsten phosphide-nickel-tungsten oxide with heterostructure | 北京工业大学 | 2022-11-15 | — | — | CN | disclosed |
| US-20210371985-A1 | ELECTROLESS NICKEL PLATING SOLUTION | ATOTECH DEUTSCHLAND GMBH (DE) | 2021-12-02 | — | — | US | disclosed |
| CN-112996933-A | Electroless nickel plating solution | 德国艾托特克公司 | 2021-06-18 | — | — | CN | disclosed |
| US-20060251800-A1 | Contact metallization scheme using a barrier layer over a silicide layer | APPLIED MATERIALS, INC. | 2006-11-09 | — | — | US | disclosed |
| US-20060252252-A1 | Electroless deposition processes and compositions for forming interconnects | APPLIED MATERIALS, INC. | 2006-11-09 | — | — | US | disclosed |
| US-20060246217-A1 | Electroless deposition process on a silicide contact | APPLIED MATERIALS, INC. | 2006-11-02 | — | — | US | disclosed |
| WO-2006102180-A2 | CONTACT METALLIZATION METHODS AND PROCESSES | APPLIED MATERIALS, INC. (US) | 2006-09-28 | — | — | WO | disclosed |
| WO-2006102318-A2 | ELECTROLESS DEPOSITION PROCESS ON A CONTACT CONTAINING SILICON OR SILICIDE | APPLIED MATERIALS, INC. (US) | 2006-09-28 | — | — | WO | disclosed |
| US-6015747-A | Method of metal/polysilicon gate formation in a field effect transistor | ADVANCED MICRO DEVICE (US) | 2000-01-18 | — | — | US | disclosed |