⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1262491 | 0.82 | — | — | |
| SCHEMBL1617238 | 0.67 | — | — | |
| SCHEMBL1245097 | 0.67 | — | — | |
| SCHEMBL16874042 | 0.67 | — | — | |
| SCHEMBL17766196 | 0.67 | — | — | |
| SCHEMBL1616169 | 0.67 | — | — | |
| SCHEMBL995029 | 0.67 | — | — | |
| SCHEMBL5420670 | 0.67 | — | — | |
| SCHEMBL8168121 | 0.67 | — | — | |
| SCHEMBL214228 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113555341-B | Semiconductor element with air gap | 南亚科技股份有限公司 | 2024-05-24 | — | — | CN | claimed |
| US-11621188-B2 | Method for fabricating a semiconductor device with air gaps | NANYA TECHNOLOGY CORPORATION (TW) | 2023-04-04 | — | — | US | claimed |
| US-11355435-B2 | Semiconductor device with air gaps | NANYA TECHNOLOGY CORPORATION (TW) | 2022-06-07 | — | — | US | claimed |
| US-20210335711-A1 | SEMICONDUCTOR DEVICE WITH AIR GAPS | NANYA TECHNOLOGY CORPORATION (TW) | 2021-10-28 | — | — | US | claimed |
| CN-113555341-A | Semiconductor component with air gap | 南亚科技股份有限公司 | 2021-10-26 | — | — | CN | claimed |
| CN-113539950-A | Method for manufacturing semiconductor element | 南亚科技股份有限公司 | 2021-10-22 | — | — | CN | claimed |
| US-20210320030-A1 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE WITH AIR GAPS | NANYA TECHNOLOGY CORPORATION (TW) | 2021-10-14 | — | — | US | claimed |
| CN-113555341-B | Semiconductor element with air gap | 南亚科技股份有限公司 | 2024-05-24 | — | — | CN | disclosed |
| US-11621188-B2 | Method for fabricating a semiconductor device with air gaps | NANYA TECHNOLOGY CORPORATION (TW) | 2023-04-04 | — | — | US | disclosed |
| US-11355435-B2 | Semiconductor device with air gaps | NANYA TECHNOLOGY CORPORATION (TW) | 2022-06-07 | — | — | US | disclosed |
| US-20210335711-A1 | SEMICONDUCTOR DEVICE WITH AIR GAPS | NANYA TECHNOLOGY CORPORATION (TW) | 2021-10-28 | — | — | US | disclosed |
| CN-113555341-A | Semiconductor component with air gap | 南亚科技股份有限公司 | 2021-10-26 | — | — | CN | disclosed |
| CN-113539950-A | Method for manufacturing semiconductor element | 南亚科技股份有限公司 | 2021-10-22 | — | — | CN | disclosed |
| US-20210320030-A1 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE WITH AIR GAPS | NANYA TECHNOLOGY CORPORATION (TW) | 2021-10-14 | — | — | US | disclosed |
| US-8263316-B2 | Electronic device manufacture | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-09-11 | — | — | US | disclosed |
| US-20060073423-A1 | Electronic device manufacture | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2006-04-06 | — | — | US | disclosed |