SCHEMBL9966620

SCHEMBL9966620

CN(C)N[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15292129 0.75
SCHEMBL12935857 0.75
SCHEMBL28763065 0.70
SCHEMBL438823 0.70
SCHEMBL22655243 0.65
SCHEMBL9564042 0.64
SCHEMBL22287256 0.60
SCHEMBL14372070 0.60
SCHEMBL25416793 0.58
SCHEMBL22589125 0.54

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11482533-B2 Apparatus and methods for plug fill deposition in 3-D NAND applications ASM IP HOLDING B.V. (NL) 2022-10-25 US claimed
CN-111599815-A Apparatus and method for depositing plug fill in 3-D NAND applications ASM IP私人控股有限公司 2020-08-28 CN claimed
US-20200266208-A1 APPARATUS AND METHODS FOR PLUG FILL DEPOSITION IN 3-D NAND APPLICATIONS ASM IP HOLDING B.V. (NL) 2020-08-20 US claimed
EP-4747262-A1 SILICON PRECURSOR COMPOUND, METHOD FOR PREPARING THE SAME, AND METHOD FOR PREPARING A SILICON-CONTAINING THIN FILM Merck Patent GmbH (DE) 2026-05-27 EP disclosed
WO-2025017523-A1 SILICON PRECURSOR COMPOUND, METHOD FOR PREPARING THE SAME, AND METHOD FOR PREPARING A SILICON-CONTAINING THIN FILM MERCK PATENT GMBH (DE) 2025-01-23 WO disclosed
US-11482533-B2 Apparatus and methods for plug fill deposition in 3-D NAND applications ASM IP HOLDING B.V. (NL) 2022-10-25 US disclosed
US-11049714-B2 Silyl substituted organoamines as precursors for high growth rate silicon-containing films VERSUM MATERIALS US, LLC (US) 2021-06-29 US disclosed
CN-111599815-A Apparatus and method for depositing plug fill in 3-D NAND applications ASM IP私人控股有限公司 2020-08-28 CN disclosed
US-20200266208-A1 APPARATUS AND METHODS FOR PLUG FILL DEPOSITION IN 3-D NAND APPLICATIONS ASM IP HOLDING B.V. (NL) 2020-08-20 US disclosed
US-20190088474-A1 Silyl Substituted Organoamines as Precursors for High Growth Rate Silicon-Containing Films VERSUM MATERIALS US, LLC (US) 2019-03-21 US disclosed
US-8541318-B2 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2013-09-24 US disclosed
US-8242032-B2 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2012-08-14 US disclosed
US-20120156894-A1 MONOSILANE OR DISILANE DERIVATIVES AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS USING THE SAME ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2012-06-21 US disclosed
US-20110165762-A1 MONOSILANE OR DISILANE DERIVATIVES AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS USING THE SAME ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2011-07-07 US disclosed
US-7863203-B2 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2011-01-04 US disclosed
US-20080160174-A1 MONOSILANE OR DISILANE DERIVATIVES AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS USING THE SAME ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2008-07-03 US disclosed