⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL24189214 | 0.95 | CA1 (0.30) | — | |
| SCHEMBL14169594 | 0.73 | CA1 (0.37) | — | |
| SCHEMBL13117952 | 0.71 | — | — | |
| SCHEMBL23293607 | 0.71 | MAPT (0.39) | — | |
| SCHEMBL6862441 | 0.68 | MAPT (0.36) | — | |
| SCHEMBL11843782 | 0.68 | PRSS1 (0.30) | — | |
| SCHEMBL7912656 | 0.68 | MAPT (0.36) | — | |
| SCHEMBL15738909 | 0.67 | — | — | |
| SCHEMBL4455993 | 0.66 | — | — | |
| SCHEMBL15700852 | 0.66 | SMN1; SMN2 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11156917-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2021-10-26 | — | — | US | disclosed |
| US-10928727-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank including actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing | FUJIFILM CORPORATION (JP) | 2021-02-23 | — | — | US | disclosed |
| US-20190377261-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2019-12-12 | — | — | US | disclosed |
| US-10423068-B2 | Active-light-sensitive or radiation-sensitive resin composition, active-light-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2019-09-24 | — | — | US | disclosed |
| US-20180120701-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-20180120701-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-9799832-B2 | Organic thin-film transistor and method for manufacturing same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-9799832-B2 | Organic thin-film transistor and method for manufacturing same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-7875746-B2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2011-01-25 | — | — | US | disclosed |
| US-7807677-B2 | HIV protease inhibitors | MEDIVIR AB (SE) | 2010-10-05 | — | — | US | disclosed |
| US-7790351-B2 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2010-09-07 | — | — | US | disclosed |
| US-7611820-B2 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2009-11-03 | — | — | US | disclosed |
| US-7611820-B2 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2009-11-03 | — | — | US | disclosed |
| US-20090136870-A1 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2009-05-28 | — | — | US | disclosed |
| US-20080249102-A1 | Hiv Protease Inhibitors | MEDIVIR AB (SE) | 2008-10-09 | — | — | US | disclosed |
| US-20080206668-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20070059639-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-15 | — | — | US | disclosed |