SCHEMBL10001715

SCHEMBL10001715

CC1C2CC(NS(=O)(=O)C(F)(F)F)C(C2)C1C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13642050 0.78 F2R (0.31) —
SCHEMBL2754963 0.74 — —
SCHEMBL14399584 0.73 — —
SCHEMBL10261059 0.72 EPHX1 (0.33) —
SCHEMBL14299636 0.71 EPHX1 (0.43) —
SCHEMBL14299638 0.70 EPHX1 (0.38) —
SCHEMBL13910113 0.69 ALDH1A1 (0.41) —
SCHEMBL3381296 0.69 CA1 (0.39) —
SCHEMBL4839197 0.69 CA1 (0.39) —
SCHEMBL4033152 0.69 CA1 (0.39) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120282548-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-08 — — US disclosed
US-8097397-B2 Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-17 — — US disclosed
US-20100086879-A1 MATERIAL FOR FORMATION OF PROTECTIVE FILM, METHOD FOR FORMATION OF PHOTORESIST PATTERN, AND SOLUTION FOR WASHING/REMOVAL OF PROTECTIVE FILM TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-08 — — US disclosed
Send feedback