SCHEMBL10044219

SCHEMBL10044219

CCC(C)OCC1CCCCC1

nearest known ligand 0.41

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
SLC1A3 P43003 4/20 0.41
SLC1A2 P43004 4/20 0.41
SLC1A1 P43005 4/20 0.41
SHBG P04278 1/20 0.38
CYP1A2 P05177 1/20 0.37
CTSK P43235 2/20 0.36
CTSL P07711 1/20 0.36
CTSB P07858 1/20 0.36
FFAR1 O14842 1/20 0.33
LMNA P02545 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20290696 0.98 SLC1A3 (0.39) SLC1A3SLC1A2SLC1A1SHBGCYP1A2
SCHEMBL14369250 0.89
SCHEMBL10044211 0.83 NAAA (0.34) SLC1A3SLC1A2SLC1A1SHBGCTSK
SCHEMBL15397435 0.83 SLC1A3 (0.32) SLC1A3SLC1A2SLC1A1
SCHEMBL28096588 0.82 FFAR1 (0.34) SLC1A3SLC1A2SLC1A1SHBGCTSK
SCHEMBL10926690 0.81 SLC1A3 (0.40) SLC1A3SLC1A2SLC1A1CYP1A2CTSK
SCHEMBL18473628 0.80 CYP1A2 (0.45) SLC1A3SLC1A2SLC1A1CYP1A2CTSK
SCHEMBL10274539 0.79 SLC1A3 (0.44) SLC1A3SLC1A2SLC1A1SHBGCYP1A2
SCHEMBL11225908 0.79 SLC1A3 (0.44) SLC1A3SLC1A2SLC1A1SHBGCYP1A2
SCHEMBL18842918 0.79 TDP1 (0.39)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2018112094-A1 1,4-THIAZINE DIOXIDE AND 1,2,4-THIADIAZINE DIOXIDE DERIVATIVES AS BETA-SECRETASE INHIBITORS AND METHODS OF USE AMGEN INC. (US) 2018-06-21 WO disclosed
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-20150086912-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-03-26 US disclosed
US-8343694-B2 Photomask blank, resist pattern forming process, and photomask preparation process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-01 US disclosed
US-8343694-B2 Photomask blank, resist pattern forming process, and photomask preparation process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-01 US disclosed
US-8124233-B2 Anti-reflection film, and polarizing plate and image display device using the same FUJIFILM CORPORATION (JP) 2012-02-28 US disclosed
US-8124233-B2 Anti-reflection film, and polarizing plate and image display device using the same FUJIFILM CORPORATION (JP) 2012-02-28 US disclosed
US-20090122410-A1 ANTI-REFLECTION FILM, AND POLARIZING PLATE AND IMAGE DISPLAY DEVICE USING THE SAME FUJIFILM CORPORATION (JP) 2009-05-14 US disclosed
US-20090122410-A1 ANTI-REFLECTION FILM, AND POLARIZING PLATE AND IMAGE DISPLAY DEVICE USING THE SAME FUJIFILM CORPORATION (JP) 2009-05-14 US disclosed
US-7498126-B2 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-03 US disclosed
US-7494760-B2 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-24 US disclosed
US-20080305411-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-11 US disclosed
US-20070292768-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-12-20 US disclosed
US-20070292768-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-12-20 US disclosed
US-20070287096-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-12-13 US disclosed
US-20070287096-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-12-13 US disclosed
US-7282316-B2 Sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-16 US disclosed
US-7282316-B2 Sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-16 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070292768-A1 Photoacid generators, chemically amplified resist compositions, and patterning process PTH1R, ASIC1, PPA1 SLC1A3 2553/4885SLC1A2 2910/4885SLC1A1 3346/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.