SCHEMBL10087710

SCHEMBL10087710

CCC(C)(F)C(=O)OCOC1C2CC3CC(C2)CC1C3

nearest known ligand 0.38

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 5/20 0.32
SCN9A Q15858 2/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
EPHX2 P34913 1/20 0.31
EPHX1 P07099 1/20 0.31
FKBP1A P62942 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL824270 0.85 SCN9A (0.32) HSD11B1SCN9A
SCHEMBL47501 0.84 HSD11B1 (0.33) HSD11B1L3MBTL1EPHX2EPHX1FKBP1A
SCHEMBL12755572 0.84 HSD11B1 (0.33) HSD11B1L3MBTL1EPHX2EPHX1FKBP1A
SCHEMBL16487733 0.82 FKBP1A (0.36) HSD11B1SCN9AL3MBTL1EPHX2EPHX1
SCHEMBL18898001 0.82 HSD11B1 (0.32) HSD11B1L3MBTL1EPHX2EPHX1FKBP1A
SCHEMBL13475391 0.80 EPHX2 (0.33) HSD11B1SCN9AL3MBTL1EPHX2EPHX1
SCHEMBL13879053 0.78 EPHX1 (0.37) HSD11B1EPHX1
SCHEMBL26939736 0.78 HSD11B1 (0.38) HSD11B1SCN9AEPHX2EPHX1FKBP1A
SCHEMBL13821661 0.77 EPHX1 (0.36) HSD11B1EPHX1
SCHEMBL13879052 0.77 EPHX1 (0.36) HSD11B1EPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8574813-B2 Resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-05 US disclosed
US-8399173-B2 Resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-19 US disclosed
US-20120225383-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-09-06 US disclosed
US-8192914-B2 Resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-05 US disclosed
US-8007981-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-08-30 US disclosed
US-7972762-B2 resist pattern with reduced defects and excellent lithographic characteristics; acrylate ester copolymer obtained by polymerizing an ( alpha -lower alkyl)acrylate ester having tertiary alkyl ester-type acid dissociable dissolution inhibiting group, under a presence of acid TOKYO OHKA KOGYO CO., LTD. (JP) 2011-07-05 US disclosed
US-7968269-B2 Positive resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-06-28 US disclosed
US-7964331-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-06-21 US disclosed
US-7939243-B2 Resin, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-10 US disclosed
US-7919227-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-05 US disclosed
US-20090155713-A1 RESIST COMPOSITION AND PROCESS FOR PRODUCING SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-18 US disclosed
US-20090142696-A1 POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION FOR THERMAL FLOW, AND RESIST PATTERN FORMING METHOD TOKYO OHIKA KOGYO CO., LTD. (JP) 2009-06-04 US disclosed
US-20090098483-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHA KOGYO CO., LTD. (JP) 2009-04-16 US disclosed
US-20090092924-A1 METHOD OF PRODUCING POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-09 US disclosed
US-20090075204-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2009-03-19 US disclosed
US-20090068583-A1 resin comprises (2-adamantyloxymethyl)methacrylate monomers which exhibit increased alkali solubility under action of acid, and acid generator such as diphenyliodonium trifluoromethanesulfonate; reduced line edge roughness, improved shape and depth of focus TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed
US-20090068588-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed
US-20090053650-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-26 US disclosed
US-20090042130-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO. LTD (JP) 2009-02-12 US disclosed
US-20090035698-A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-05 US disclosed