⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17974531 | 0.79 | — | — | |
| SCHEMBL16300034 | 0.77 | — | — | |
| SCHEMBL14617060 | 0.74 | CYP1A2 (0.37) | — | |
| SCHEMBL12259584 | 0.72 | — | — | |
| SCHEMBL13482603 | 0.71 | — | — | |
| SCHEMBL2734458 | 0.71 | — | — | |
| SCHEMBL13398676 | 0.70 | ABCB1 (0.33) | — | |
| SCHEMBL13157361 | 0.70 | — | — | |
| SCHEMBL2759442 | 0.70 | — | — | |
| SCHEMBL10016687 | 0.70 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9952509-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-04-24 | — | — | US | disclosed |
| US-9841679-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-12-12 | — | — | US | disclosed |
| US-9791777-B2 | Active light sensitive or radiation sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-10-17 | — | — | US | disclosed |
| US-20170097565-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-04-06 | — | — | US | disclosed |
| US-20170038685-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING COMPOSITION, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-02-09 | — | — | US | disclosed |
| US-20160347897-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-20160349613-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-20160313645-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-10-27 | — | — | US | disclosed |
| US-20160266488-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-09-15 | — | — | US | disclosed |
| US-20160223905-A1 | ACTIVE LIGHTRAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-08-04 | — | — | US | disclosed |
| US-20140242518-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-28 | — | — | US | disclosed |
| US-8753805-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-17 | — | — | US | disclosed |
| US-20120328987-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-27 | — | — | US | disclosed |
| US-20120115085-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2012-05-10 | — | — | US | disclosed |
| US-7666967-B2 | Ester compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-23 | — | — | US | disclosed |
| US-7488567-B2 | Polymer, resist composition and patterning process | PANASONIC CORPORATION (JP) | 2009-02-10 | — | — | US | disclosed |
| US-20080261150-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-23 | — | — | US | disclosed |
| US-7341817-B2 | Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2008-03-11 | — | — | US | disclosed |
| US-7241553-B2 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-07-10 | — | — | US | disclosed |
| US-20070128555-A1 | Novel ester compound, polymer, resist composition, and patterning process | CENTRAL GLASS CO., LTD. | 2007-06-07 | — | — | US | disclosed |