SCHEMBL10116023

SCHEMBL10116023

CCC(C)(C(=O)OC1C2CC3(C(F)(F)F)C(=O)OC1C3O2)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12761133 0.89 — —
SCHEMBL12753783 0.89 HMGCR (0.34) —
SCHEMBL12761142 0.86 — —
SCHEMBL12761138 0.85 — —
SCHEMBL12832727 0.83 — —
SCHEMBL17264806 0.82 — —
SCHEMBL12761044 0.81 — —
SCHEMBL12753599 0.80 HMGCR (0.33) —
SCHEMBL12829187 0.79 PPARG (0.31) —
SCHEMBL10115873 0.79 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9835945-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-12-05 — — US disclosed
US-20170123318-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2017-05-04 — — US disclosed
US-9541831-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-01-10 — — US disclosed
US-20150185609-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2015-07-02 — — US disclosed
US-9057952-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2015-06-16 — — US disclosed
US-8871421-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2014-10-28 — — US disclosed
US-8389200-B2 Pattern forming method FUJIFILM CORPORATION (JP) 2013-03-05 — — US disclosed
US-20120115085-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2012-05-10 — — US disclosed
US-7842452-B2 Pattern forming method FUJIFILM CORPORATION (JP) 2010-11-30 — — US disclosed
US-7700260-B2 Pattern forming method FUJIFILM CORPORATION (JP) 2010-04-20 — — US disclosed
US-7674567-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-03-09 — — US disclosed
US-7611820-B2 Positive resist composition and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2009-11-03 — — US disclosed
US-20090123880-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-05-14 — — US disclosed
US-7482112-B2 Pattern forming method FUJIFILM CORPORATION (JP) 2009-01-27 — — US disclosed
US-20080305433-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2008-12-11 — — US disclosed
US-20070178405-A1 Positive resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-08-02 — — US disclosed
US-20070172769-A1 Pattern forming method FUJIFILM CORPORATION (JP) 2007-07-26 — — US disclosed
US-20070172768-A1 Pattern forming method FUJIFILM CORPORATION (JP) 2007-07-26 — — US disclosed
US-20070065752-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-22 — — US disclosed
US-20070059639-A1 Positive resist composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-15 — — US disclosed
Send feedback