SCHEMBL12753783

SCHEMBL12753783

CCC(C)(C)C(=O)OC1C2CC3(C(F)(F)F)C(=O)OC1C3O2

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ HMGCR P04035 5/20 0.34
▸ CYP3A4 P08684 3/20 0.31
▸ USP2 O75604 2/20 0.31
▸ ALDH1A1 P00352 2/20 0.31
▸ TSHR P16473 2/20 0.31
▸ KDM4E B2RXH2 1/20 0.31
▸ SMN1; SMN2 Q16637 1/20 0.31
▸ NR1I2 O75469 1/20 0.31
▸ ABCB11 O95342 1/20 0.31
▸ NR3C1 P04150 1/20 0.31
▸ PGR P06401 1/20 0.31
▸ ABCB1 P08183 1/20 0.31
▸ ADORA3 P0DMS8 1/20 0.31
▸ CYP2C8 P10632 1/20 0.31
▸ CHRM1 P11229 1/20 0.31
▸ ADRB3 P13945 1/20 0.31
▸ GABRA1 P14867 1/20 0.31
▸ ADRA2B P18089 1/20 0.31
▸ ADRA2C P18825 1/20 0.31
▸ DRD1 P21728 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12761133 0.91 — —
SCHEMBL17264806 0.90 — —
SCHEMBL10116023 0.89 — —
SCHEMBL12761142 0.88 — —
SCHEMBL12761138 0.86 — —
SCHEMBL12832727 0.85 — —
SCHEMBL9973364 0.83 HMGCR (0.34) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL12761044 0.83 — —
SCHEMBL2735495 0.83 HMGCR (0.34) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL12753599 0.81 HMGCR (0.33) HMGCRCYP3A4TSHRKDM4ESMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9023576-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2015-05-05 — — US disclosed
US-20110076622-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-31 — — US disclosed
US-7906268-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-03-15 — — US disclosed
US-7790351-B2 Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent FUJIFILM CORPORATION (JP) 2010-09-07 — — US disclosed
US-7771912-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-08-10 — — US disclosed
US-20090136870-A1 Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent FUJIFILM CORPORATION (JP) 2009-05-28 — — US disclosed
US-7504194-B2 Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent FUJIFILM CORPORATION (JP) 2009-03-17 — — US disclosed
US-20070134589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-14 — — US disclosed
US-20070134590-A1 Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent FUJIFILM CORPORATION. (JP) 2007-06-14 — — US disclosed
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