SCHEMBL10134932

SCHEMBL10134932

C=C(C)C(=O)Oc1ccc2cc(C(=O)OCC(F)(F)S(=O)(=O)O)ccc2c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ELANE P08246 1/20 0.40
TDP1 Q9NUW8 3/20 0.38
MAPT P10636 2/20 0.38
NPC1 O15118 1/20 0.38
GAA P10253 1/20 0.38
XBP1 P17861 1/20 0.38
RAB9A P51151 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
FTO Q9C0B1 1/20 0.35
POLB P06746 1/20 0.34
APEX1 P27695 1/20 0.34
HTT P42858 1/20 0.34
HGFAC Q04756 1/20 0.34
ADRB2 P07550 1/20 0.33
ADRB1 P08588 1/20 0.33
ADRB3 P13945 1/20 0.33
KMT2A Q03164 3/20 0.33
ATM Q13315 1/20 0.33
KDM4E B2RXH2 1/20 0.32
HRH3 Q9Y5N1 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10134907 0.90 ELANE (0.47) ELANETDP1MAPTSMN1; SMN2POLB
SCHEMBL14902646 0.88 ELANE (0.40) ELANETDP1MAPTNPC1GAA
SCHEMBL10134923 0.85 MAPT (0.40) TDP1MAPTNPC1GAAXBP1
SCHEMBL26312933 0.81 ELANE (0.34) ELANEKMT2AATMMEN1
SCHEMBL12376762 0.81 ELANE (0.42) ELANETDP1FTOPOLBAPEX1
SCHEMBL12016470 0.80 NPC1 (0.50) TDP1MAPTNPC1GAAXBP1
SCHEMBL16329474 0.80 ELANE (0.48) ELANETDP1MAPTKMT2ASTS
SCHEMBL12119787 0.79 ELANE (0.39) ELANETDP1MAPTNPC1RAB9A
SCHEMBL12376821 0.79 ELANE (0.39) ELANETDP1MAPTNPC1RAB9A
SCHEMBL10134905 0.79 SERPINE1 (0.39) ELANETDP1MAPTNPC1GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8980527-B2 Pattern forming process and resist compostion SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-17 US disclosed
US-8980527-B2 Pattern forming process and resist compostion SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-17 US disclosed
US-8815492-B2 Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-26 US disclosed
US-8815492-B2 Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-26 US disclosed
US-8691490-B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-08 US disclosed
US-8691490-B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-08 US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 US disclosed
US-20130108964-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-02 US disclosed
US-8105748-B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-8105748-B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, ASH2L ELANE 3988/4885TDP1 4560/4885MAPT 4661/4885
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X ELANE 288/4885TDP1 3710/4885MAPT 3052/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.