⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17552805 | 0.88 | — | — | |
| SCHEMBL13609279 | 0.85 | — | — | |
| SCHEMBL6367388 | 0.84 | — | — | |
| SCHEMBL16171274 | 0.83 | MMP8 (0.30) | — | |
| SCHEMBL18478153 | 0.83 | — | — | |
| SCHEMBL14827787 | 0.83 | — | — | |
| SCHEMBL9924524 | 0.83 | — | — | |
| SCHEMBL12026714 | 0.82 | — | — | |
| SCHEMBL12026709 | 0.81 | MAPT (0.31) | — | |
| SCHEMBL10096780 | 0.80 | CTRB1 (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 127 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10012903-B2 | Resist composition and pattern forming process | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2018-07-03 | — | — | US | disclosed |
| US-9790166-B2 | Polymer, monomer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-17 | — | — | US | disclosed |
| US-20170277037-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-28 | — | — | US | disclosed |
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-20170210836-A1 | POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-27 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-9645493-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9632417-B2 | Shrink material and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-25 | — | — | US | disclosed |
| US-20090233223-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-17 | — | — | US | disclosed |
| US-7569326-B2 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-20090035699-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080090172-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20070275326-A1 | Resist protective film composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-29 | — | — | US | disclosed |
| US-20070231738-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070178407-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-08-02 | — | — | US | disclosed |